| Allicdata Part #: | FDP120AN15A0-ND |
| Manufacturer Part#: |
FDP120AN15A0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 150V 14A TO-220AB |
| More Detail: | N-Channel 150V 2.8A (Ta), 14A (Tc) 65W (Tc) Throug... |
| DataSheet: | FDP120AN15A0 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 65W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 770pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 10V |
| Series: | PowerTrench® |
| Rds On (Max) @ Id, Vgs: | 120 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2.8A (Ta), 14A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FDP120AN15A0 is a power field-effect transistor (FET) and is used in low and medium power applications. It is part of the SuperFET family and is ideal for applications that require high-current/ high-temperature/ pulsed current, such as DC-DC converters, dc-ac inverters, power motor control, and motor drive systems.
FDP120AN15A0 is a single N-channel enhancement mode field-effect transistor (MOSFET) made up of a silicon substrate with a three-layer Figure eight structure in which the gate and drain are connected to a P-type substrate and the source is connected to an N-type diffusion. It has two drain terminals, a gate terminal, and a source terminal. It is designed for low drain-source ON resistance and low gate-source capacitance. The device has a low forward voltage drop, a very low input capacitance and a very low gate-source leakage current.
The main features of FDP120AN15A0 include a low threshold voltage, a fast switching time and a low input capacitance. The device has a wide operating temperature range, from -55 to 175 degrees Celsius, and its maximum power dissipation is 30 watts at a case temperature of 25 degrees Celsius. It also has a low reverse leakage current and a low on-state resistance.
The working principle of FDP120AN15A0 lies in the movement of charge carriers when an electric field is applied across the source and drain terminals. At the turn-on of the transistor, the gate voltage is increased, forming an electric field between the source and the gate. This induces holes from the P-type substrate to the N-type diffusion, which creates a narrow conducting channel between the source and the drain. As the voltage increases, the current flowing through the channel also increases. At the turn-off of the transistor, the gate voltage is decreased, reducing the electric field between the source and the gate. This decreases the current flowing through the channel, thus stopping the current flow.
In conclusion, the FDP120AN15A0 is a single N-channel enhancement mode field-effect transistor (MOSFET) that is used in low and medium power applications such as dc-dc converters, dc-ac inverters, power motor control and motor drive systems. It has a wide operating temperature range and a fast switching time. It has a low threshold voltage, a low input capacitance and a low reverse leakage current. The working principle of the FDP120AN15A0 is based on the movement of charge carriers when an electric field is applied across the source and drain terminals.
The specific data is subject to PDF, and the above content is for reference
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FDP120AN15A0 Datasheet/PDF