Allicdata Part #: | FDP14AN06LA0-ND |
Manufacturer Part#: |
FDP14AN06LA0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 67A TO-220AB |
More Detail: | N-Channel 60V 10A (Ta), 67A (Tc) 125W (Tc) Through... |
DataSheet: | FDP14AN06LA0 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2900pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 11.6 mOhm @ 67A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 67A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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FDP14AN06LA0 is a type of Field Effect Transistor (FET) that belongs to the class of MOSFET (Metal Oxide Silicon Field Effect Transistor). It is a single field effect transistor, which means that it only comprises of one MOSFET in the package. This type of FET is commonly used in devices that perform switching and amplification functions.
The basis of FET operation is the movement of charge carriers within the transistor. The FDP14AN06LA0 is an N-channel enhancement-mode FET, whose drain-source breakdown voltage is up to 60V. Furthermore, the device has a current (drain) rating of 110A, with a continuous current of 34A. It operates at a voltage of 4V and can handle power dissipation of 1000mW.
FDP14AN06LA0 is typically used for the switching of high power amplifiers, and motor control systems. The device helps to control the switching of high power lighting systems, and electric vehicles. Its low on-resistance and low capacitance characteristics make it well-suited for radio frequency applications. Furthermore, because it can operate at high frequencies, it is also used in the design of high frequency rectifier and filter circuits. The FDP14AN06LA0 can also be used in the design of differential amplifier stages.
The FDP14AN06LA0 can also be used in the production of DC-to-DC converter stages, which are generally required when a power supply needs to be converted from one input voltage to another. Furthermore, the device can also be used for impaction protection in high power motor designs, as well as protection circuits in various home appliances, heating systems, and other electrical and electronic circuits.
The working principle of the FDP14AN06LA0 is the same as that of any other FET. Charge carriers are allowed to move through the transistor when a voltage is applied across it. The output current of the FDP14AN06LA0 is dependent upon the amount of voltage that is applied, as well as the source-drain resistance of the transistor. When the voltage is below its threshold voltage, the FDP14AN06LA0 will not conduct its drain-source current. The current flowing in the FET can be increased by increasing the voltage. However, beyond a certain point, the current will saturate and become independent of the drain-source voltage.
The FDP14AN06LA0 is widely used in industry due to its wide range of applications, such as powering radio frequency systems, switching light amplification systems, and offering protection to circuits in home appliances. Its robust design and high power rating make it a preferred choice for many of these applications.
The specific data is subject to PDF, and the above content is for reference
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