FDP12N50

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	165W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1315pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	UniFET™
Rds On (Max) @ Id, Vgs:	650 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	11.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>The FDP12N50 is a vertical double diffused MOSFET (VDMOS) specifically designed for automotive, computer, and industrial audio applications. It is ideal for high fidelity power amplifiers where low noise and high fidelity are important.</p><p>This device offers low on-resistance, fast switching speed, and high-temperature stability compared to other power MOSFETs. Its low capacitance and low gate charge make it suitable for high-frequency switching. It also has an enhanced protection circuit designed to protect it from voltage spikes and short-term transients.</p><p>FDP12N50 offers high-power pulse capability for a wide range of audio applications. It has a wide input voltage range from 4.5V to 24V. This device has a low on-resistance of just 8.4 ohms and a low gate threshold voltage of just 3.2V, making it suitable for high-efficiency audio amplifiers.</p><p>The FDP12N50 has a maximum drain-source voltage (Vdss) rating of 120V, a maximum drain current of 12A, and a maximum power dissipation rating of 10W. It is also capable of withstanding operating temperature ranges of -55°C to 175°C.</p><p>The FDP12N50 is an N-Channel MOSFET, which means that it is constructed of an insulated gate and a drain-source region. The insulated gate is electrically charged and acts as a switch when there is a voltage applied to the gate.</p><p>When a positive gate voltage (Vgp) is applied to the FDP12N50 insulated gate, the electrons enter the channel. This increases the current from the drain-to-source (Idd) and effectively turns on the device. When the gate voltage is removed, the current is cut off from the drain-to-source and the channel is depleted of electrons. This effectively turns off the device.</p><p>The FDP12N50 is also able to support a high-frequency pulse current capability. This is because of its low capacitance value and low gate charge.</p><p>The FDP12N50 is an ideal solution for automotive and computer audio applications. Its low on-resistance, fast switching speed, and wide input voltage range make it an optimal choice for high-power pulse applications. Its low gate threshold voltage and enhanced protection make it suitable for high-efficiency audio amplifiers, while its high-temperature stability makes it capable of withstanding extreme operating conditions.</p>

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