Allicdata Part #: | FDP12N50NZ-ND |
Manufacturer Part#: |
FDP12N50NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 11.5A TO-220 |
More Detail: | N-Channel 500V 11.5A (Tc) 170W (Tc) Through Hole T... |
DataSheet: | FDP12N50NZ Datasheet/PDF |
Quantity: | 95 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1235pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | UniFET-II™ |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 5.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FDP12N50NZ is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high performance power management applications. Its user-friendly design makes it ideal for use in a variety of applications, including high-current switching, high-voltage powering, and energy-efficient power management. The FDP12N50NZ offers higher levels of power efficiency, enhanced reliability, and better overall performance than many other similar MOSFETs.
The FDP12N50NZ is a lateral MOSFET, which means its drain and source electrodes are both on the same side of the semiconductor material. It utilizes Drain-source breakdown voltage technology which helps to improve power efficiency and reduce switching losses. This device also provides low output capacitance, low gate-source capacitance, and improved power dissipation. Other features that make the FDP12N50NZ ideal for a range of applications include robust Gate Charge optimization and excellent thermal characteristics.
One of the most common applications for the FDP12N50NZ MOSFET is in power management circuitry. For example, it can be used to create high current switching for products such as laptops, PDAs, and cell phones. This MOSFET is also commonly used in high voltage power supply circuits, such as for chargers and adapters. Additionally, the FDP12N50NZ can be used in switched-mode-power-supply (SMPS) circuits, which are used in numerous different devices, from cameras to game consoles to sound systems.
The FDP12N50NZ is also used in energy-efficient LED lighting. LED lighting produces much lower levels of power consumption than traditional incandescent lighting, and the FDP12N50NZ MOSFET is one of the key components in LED lighting circuitry. This device is used to power the LED while optimizing power distribution levels and maximizing energy efficiency. It also helps reduce EMI (electromagnetic interference) noise and ensure accurate dimming levels.
The FDP12N50NZ works on the basic principle of semiconductor switching, where a small amount of voltage applied to the Gate of the device changes the resistance between its Drain and Source. This resistance change is what allow the current to flow, and is the basis for the FDP12N50NZ\'s ability to switch high currents, reduce power consumption, and provide reliable power distribution.
Overall, the FDP12N50NZ is an ideal solution for a wide range of power management applications. Its user-friendly design and advanced features make it ideal for use in power supplies, LED lighting, and other high-performance power management circuits. In addition, its excellent power efficiency, robust Gate Charge optimization, and improved thermal characteristics make it an ideal choice for energy-efficient power management and reliable power distribution.
The specific data is subject to PDF, and the above content is for reference
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