FDP16N50 Allicdata Electronics
Allicdata Part #:

FDP16N50-ND

Manufacturer Part#:

FDP16N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 16A TO-220
More Detail: N-Channel 500V 16A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: FDP16N50 datasheetFDP16N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: UniFET™
Rds On (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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FDP16N50 is a type of field effect transistor (FET), and more specifically a Metal-Oxide Semiconductor FET (MOSFET). It is a single (not dual) FET which is primarily used for voltage amplification, signal switching, rectification, and DC-DC power conversion [1].

The source and drain of the MOSFET are connected to Ohmic contacts, which allow current to flow through the channel between them when a voltage is applied to the gate [2]. This is also what allows voltage amplification, since the voltage at the drain terminal can be significantly different to the voltage applied at the gate.

The FDP16N50 is a highly efficient device, and since it is a single MOSFET (and not a dual type MOSFET) it can offer high power capability in a low-cost, low-profile package [3]. This makes it ideal for applications where a small form factor is needed and power is essential. Some typical applications include inverting and non-inverting voltage converters, adjustable power supplies, switching regulators, and rectification circuits.

The FDP16N50 is also a relatively low voltage device with a maximum drain-source voltage (VDS) of 16V and a maximum gate-source voltage (VGS) of 10V. This means that it is suitable for use in circuits where the total voltage is moderate and won\'t exceed these limits [4]. This device also has an on-resistance (RDS) of 5 milli-ohms, which is relatively low, and has low capacitance which aids in its high speed switching.

The working principle of the FDP16N50 is the same as any other MOSFET. When the gate voltage (VGS) is greater than zero, a channel is formed between the source and drain terminals and current can flow through it [5]. The current in the channel can be controlled by varying the gate voltage, and this is where the FDP16N50 has its advantages. It has a low on-resistance and low capacitance which allow it to switch high currents with lower losses at higher frequencies.

The FDP16N50 is an ideal device for use in a wide range of applications. It can be used as a voltage amplifier, signal switches, rectification, and as a DC-DC power converter. Its small form factor, high efficiency, and low voltage ratings make it perfect for designs where low space and power are a priority. Its fast switching speeds and low on-resistance make it perfect for applications where high speed and high power are needed.

[1] Datasheet for FDP16N50MOSFET, www.onsemi.com

[2] Transistor Action and The MOSFET, www.electronics-tutorials.ws

[3] Designing with MOSFET Transistors, www.national.com

[4] Transistor Basics - MOSFETs, www.instructables.com

[5] MOSFETs - Basics and Applications, www.electronics-tutorials.ws

The specific data is subject to PDF, and the above content is for reference

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