FGH40N60SFDTU Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Field Stop
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	2.9V @ 15V, 40A
Power - Max:	290W
Switching Energy:	1.13mJ (on), 310µJ (off)
Input Type:	Standard
Gate Charge:	120nC
Td (on/off) @ 25°C:	25ns/115ns
Test Condition:	400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr):	45ns
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Base Part Number:	FGH40N60

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FGH40N60SFDTU Application Field and Working Principle

Transistors are three terminal electronic devices which act as controllable switches. Among them, Insulated-Gate-Bipolar Transistors otherwise known as IGBTs are popular because of their low driving power, high switching speed, and solid-state reliability. In this article, we will talk about FGH40N60SFDTU and its application field as well as working principle.FGH40N60SFDTU is an IGBT in TO-247 package. As a standard IGBT, it has three terminals; collector, emitter and gate terminals. With each of these terminals playing a key role in the device, there are two main parameters to consider; their respective voltage ratings and their current ratings. For the FGH40N60SFDTU, the voltage rating ranges from 600-650V with a peak collector-emitter current rating of 40A.The FGH40N60SFDTU IGBT is usually used in applications that require high power switching such as motor control, UPS systems, and high power converter systems. This is mainly because of its high current capability and excellent switching characteristics. It is also designed to minimize the inherently high losses that are typically associated with IGBTs, resulting in higher efficiency. The working principle of the FGH40N60SFDTU IGBT is based on its ability to control the current flow direction and magnitude between its three terminals. This IGBT operates on the principle of Minority Carrier Injection or MCI. When the gate voltage is applied, it creates an electric field in the N-channel region of the IGBT which attracts electrons from the N-type layers. This in turn creates a depletion region of increased potential barrier between the N-type and P-type layers, inhibiting the current flow. When the gate voltage is decreased, the barrier decreases and the current flow increases. The rate of current flow increases with the increase in the voltage potential. This principle of MCI enables the IGBT device to operate as an efficient switching switch for high power applications. The FGH40N60SFDTU IGBT also has excellent reverse blocking capability which makes it a great choice for heavier loads, like motor control applications. Finally, the FGH40N60SFDTU IGBT also has a built-in protected circuit which prevents it from over-heating and becomes damaged. This protected circuit monitors the temperature of the IGBT, the gate voltage and the junction temperature. If the device reaches the critical temperature point it will automatically shut down the current and thereby protect the IGBT from thermal runaway. In conclusion, the FGH40N60SFDTU IGBT is an ideal choice for high power applications due to its high current and excellent switching performance, reverse blocking capability and built-in protective circuit. It is a reliable and efficient switching switch for motor control and other heavy load applications. Furthermore, its thermal protection feature provides additional protection from thermal runaway and ensures long-term usage without damage.

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