Allicdata Part #: | FGH40N60UFTU-ND |
Manufacturer Part#: |
FGH40N60UFTU |
Price: | $ 2.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 80A 290W TO247 |
More Detail: | IGBT Field Stop 600V 80A 290W Through Hole TO-247 |
DataSheet: | FGH40N60UFTU Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.03490 |
10 +: | $ 1.82637 |
100 +: | $ 1.49631 |
500 +: | $ 1.27378 |
1000 +: | $ 1.07428 |
Series: | -- |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
Power - Max: | 290W |
Switching Energy: | 1.19mJ (on), 460µJ (off) |
Input Type: | Standard |
Gate Charge: | 120nC |
Td (on/off) @ 25°C: | 24ns/112ns |
Test Condition: | 400V, 40A, 10 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Base Part Number: | FGH40N60 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The FGH40N60UFTU is a state-of-the-art, high-side insulated gate bipolar transistor (IGBT). This semiconductor device is a combination of a MOSFET and a bipolar transistor, allowing the user to use the outstanding performance of both components in a single package. It is represented by a single symbol in circuit diagrams and block diagrams, making it easy to interpret and understand. The FGH40N60UFTU can be used in a wide range of applications where power handling up to 600A is required.
Features
The FGH40N60UFTU IGBT provides several benefits and features. One key feature is its high-side driving capability. It has an integrated MOSFET gate driver, which simplifies the interface between the control circuit and the load. The device also has a low forward voltage drop (VF) and a low conduction resistance (RCE) compared to similar devices, allowing for increased efficiency. Additionally, the device has a maximum junction temperature rating of 175°C, allowing it to be used in power circuits with high ambient temperatures.
Applications
The FGH40N60UFTU is well suited for applications that require high power handling capabilities. Common applications include variable frequency drives (VFDs), induction heating, traction drives, and motor control circuits. The device is also well suited for applications in the welding, aerospace and automotive industries due its rugged construction and high temperature tolerance. Furthermore, its high efficiency compared to traditional bipolar transistors makes it ideal for solar panel and battery charger applications.
Working Principle
The FGH40N60UFTU IGBT works by the application of voltage to a MOSFET gate, which controls the conduction of a bipolar transistor. When a positive voltage is applied to the gate, the MOSFET is turned on and current carrying capacity is increased. Conversely, a negative voltage will turn off the MOSFET and current carrying capacity is decreased. In order to turn off the IGBT, the MOSFET must be turned off first, which is achieved by removing the gate voltage.
Conclusion
The FGH40N60UFTU IGBT is a state-of-the-art device that combines the excellent performance of a MOSFET and a bipolar transistor into a single package. It can be used in a wide range of applications, including VFDs, induction heating, welding, and automotive, due to its high-side driving capability and wide temperature range. Its simple MOSFET gate driver also simplifies the design of power circuits that require high power handling capabilities. Additionally, its low forward voltage drop and low conduction resistance make it ideal for applications with high efficiency requirements.
The specific data is subject to PDF, and the above content is for reference
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