FGH40N60UFTU Allicdata Electronics
Allicdata Part #:

FGH40N60UFTU-ND

Manufacturer Part#:

FGH40N60UFTU

Price: $ 2.24
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 80A 290W TO247
More Detail: IGBT Field Stop 600V 80A 290W Through Hole TO-247
DataSheet: FGH40N60UFTU datasheetFGH40N60UFTU Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.03490
10 +: $ 1.82637
100 +: $ 1.49631
500 +: $ 1.27378
1000 +: $ 1.07428
Stock 1000Can Ship Immediately
$ 2.24
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 290W
Switching Energy: 1.19mJ (on), 460µJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 24ns/112ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Base Part Number: FGH40N60
Description

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The FGH40N60UFTU is a state-of-the-art, high-side insulated gate bipolar transistor (IGBT). This semiconductor device is a combination of a MOSFET and a bipolar transistor, allowing the user to use the outstanding performance of both components in a single package. It is represented by a single symbol in circuit diagrams and block diagrams, making it easy to interpret and understand. The FGH40N60UFTU can be used in a wide range of applications where power handling up to 600A is required.

Features

The FGH40N60UFTU IGBT provides several benefits and features. One key feature is its high-side driving capability. It has an integrated MOSFET gate driver, which simplifies the interface between the control circuit and the load. The device also has a low forward voltage drop (VF) and a low conduction resistance (RCE) compared to similar devices, allowing for increased efficiency. Additionally, the device has a maximum junction temperature rating of 175°C, allowing it to be used in power circuits with high ambient temperatures.

Applications

The FGH40N60UFTU is well suited for applications that require high power handling capabilities. Common applications include variable frequency drives (VFDs), induction heating, traction drives, and motor control circuits. The device is also well suited for applications in the welding, aerospace and automotive industries due its rugged construction and high temperature tolerance. Furthermore, its high efficiency compared to traditional bipolar transistors makes it ideal for solar panel and battery charger applications.

Working Principle

The FGH40N60UFTU IGBT works by the application of voltage to a MOSFET gate, which controls the conduction of a bipolar transistor. When a positive voltage is applied to the gate, the MOSFET is turned on and current carrying capacity is increased. Conversely, a negative voltage will turn off the MOSFET and current carrying capacity is decreased. In order to turn off the IGBT, the MOSFET must be turned off first, which is achieved by removing the gate voltage.

Conclusion

The FGH40N60UFTU IGBT is a state-of-the-art device that combines the excellent performance of a MOSFET and a bipolar transistor into a single package. It can be used in a wide range of applications, including VFDs, induction heating, welding, and automotive, due to its high-side driving capability and wide temperature range. Its simple MOSFET gate driver also simplifies the design of power circuits that require high power handling capabilities. Additionally, its low forward voltage drop and low conduction resistance make it ideal for applications with high efficiency requirements.

The specific data is subject to PDF, and the above content is for reference

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