Allicdata Part #: | FGH40N65UFDTU-F085-ND |
Manufacturer Part#: |
FGH40N65UFDTU-F085 |
Price: | $ 3.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 650V 40A 290W TO247 |
More Detail: | IGBT Field Stop 650V 80A 290W Through Hole TO-247 |
DataSheet: | FGH40N65UFDTU-F085 Datasheet/PDF |
Quantity: | 250 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 3.29490 |
10 +: | $ 2.96163 |
100 +: | $ 2.42651 |
500 +: | $ 2.06562 |
1000 +: | $ 1.74209 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
Power - Max: | 290W |
Switching Energy: | 1.28mJ (on), 500µJ (off) |
Input Type: | Standard |
Gate Charge: | 119nC |
Td (on/off) @ 25°C: | 23ns/126ns |
Test Condition: | 400V, 40A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 65ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The FGH40N65UFDTU-F085 is a high performance, super-rugged IGBT transistor created by STMicroelectronics. This device is a special type of insulated-gate bi-polar transistor (IGBT) which is built on their latest n-channel trench technology for unmatched performance. It features low on-state voltage and low switching losses, and integrates a third "fast turn off" termination for higher system efficiency.
The FGH40N65UFDTU-F085 is often used in HVDC link converters and variable speed drives in various applications ranging from military and industrial to automotive. It has the capability to support high currents up to 40 A, while maintaining low RDS(on) values down to 3.2 mohm. Its output voltage is adjustable up to 650 volts, and its operating temperature range is between -40°C to +150°C.
The FGH40N65UFDTU-F085 offers improved gold bonding for highly reliable connections and is available in a standard 10-pin PG-TO220-3 package, which makes it highly attractive for SMD assembly. This device includes STMicroelectronics’ advanced second-generation thin-wafer technology, allowing it to achieve extremely fast switching times and improved electro-thermal performance.
The FGH40N65UFDTU-F085 works on the principle of carrier injection when the drain emitter voltage, VGE, and the internal gate voltage, VGS, are below the threshold voltage. This causes electrons to be injected into the gate oxide creating a two-dimensional electron gas during the on-state. When the VGE and VGS reach their peak, the transistor passes through the off-state and no current flows. The device will then undergo the reverse process with the electrons being outjected from the gate oxide and carrier recombination takes place.
The FGH40N65UFDTU-F085 is a reliable and efficient IGBT transistor for various high-power applications. This device provides low static and dynamic losses, along with superior thermal performance, making it an ideal alternative to MOSFETs. It is extensively used in various applications like home appliances, solar inverters, industrial motor drives, UPS, welding machines, and HVDC link converters.
In conclusion, the FGH40N65UFDTU-F085 is an innovative IGBT transistor that integrates advanced technology to achieve superior performance. It can support high currents, adjusts output voltage up to 650 volts, and its operating temperature range is between -40°C to +150°C. The device offers low static and dynamic losses and outstanding thermal performance. It is highly suitable for HVDC link converters, variable speed drives, home appliances, solar inverters, industrial motor drives, UPS, and welding machines.
The specific data is subject to PDF, and the above content is for reference
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