FGH40N65UFDTU-F085 Allicdata Electronics
Allicdata Part #:

FGH40N65UFDTU-F085-ND

Manufacturer Part#:

FGH40N65UFDTU-F085

Price: $ 3.63
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 650V 40A 290W TO247
More Detail: IGBT Field Stop 650V 80A 290W Through Hole TO-247
DataSheet: FGH40N65UFDTU-F085 datasheetFGH40N65UFDTU-F085 Datasheet/PDF
Quantity: 250
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 3.29490
10 +: $ 2.96163
100 +: $ 2.42651
500 +: $ 2.06562
1000 +: $ 1.74209
Stock 250Can Ship Immediately
$ 3.63
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 290W
Switching Energy: 1.28mJ (on), 500µJ (off)
Input Type: Standard
Gate Charge: 119nC
Td (on/off) @ 25°C: 23ns/126ns
Test Condition: 400V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 65ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The FGH40N65UFDTU-F085 is a high performance, super-rugged IGBT transistor created by STMicroelectronics. This device is a special type of insulated-gate bi-polar transistor (IGBT) which is built on their latest n-channel trench technology for unmatched performance. It features low on-state voltage and low switching losses, and integrates a third "fast turn off" termination for higher system efficiency.

The FGH40N65UFDTU-F085 is often used in HVDC link converters and variable speed drives in various applications ranging from military and industrial to automotive. It has the capability to support high currents up to 40 A, while maintaining low RDS(on) values down to 3.2 mohm. Its output voltage is adjustable up to 650 volts, and its operating temperature range is between -40°C to +150°C.

The FGH40N65UFDTU-F085 offers improved gold bonding for highly reliable connections and is available in a standard 10-pin PG-TO220-3 package, which makes it highly attractive for SMD assembly. This device includes STMicroelectronics’ advanced second-generation thin-wafer technology, allowing it to achieve extremely fast switching times and improved electro-thermal performance.

The FGH40N65UFDTU-F085 works on the principle of carrier injection when the drain emitter voltage, VGE, and the internal gate voltage, VGS, are below the threshold voltage. This causes electrons to be injected into the gate oxide creating a two-dimensional electron gas during the on-state. When the VGE and VGS reach their peak, the transistor passes through the off-state and no current flows. The device will then undergo the reverse process with the electrons being outjected from the gate oxide and carrier recombination takes place.

The FGH40N65UFDTU-F085 is a reliable and efficient IGBT transistor for various high-power applications. This device provides low static and dynamic losses, along with superior thermal performance, making it an ideal alternative to MOSFETs. It is extensively used in various applications like home appliances, solar inverters, industrial motor drives, UPS, welding machines, and HVDC link converters.

In conclusion, the FGH40N65UFDTU-F085 is an innovative IGBT transistor that integrates advanced technology to achieve superior performance. It can support high currents, adjusts output voltage up to 650 volts, and its operating temperature range is between -40°C to +150°C. The device offers low static and dynamic losses and outstanding thermal performance. It is highly suitable for HVDC link converters, variable speed drives, home appliances, solar inverters, industrial motor drives, UPS, and welding machines.

The specific data is subject to PDF, and the above content is for reference

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