FGH40N60SMD Allicdata Electronics
Allicdata Part #:

FGH40N60SMD-ND

Manufacturer Part#:

FGH40N60SMD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 80A 349W TO-247-3
More Detail: IGBT Field Stop 600V 80A 349W Through Hole TO-247-...
DataSheet: FGH40N60SMD datasheetFGH40N60SMD Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Power - Max: 349W
Switching Energy: 870µJ (on), 260µJ (off)
Input Type: Standard
Gate Charge: 119nC
Td (on/off) @ 25°C: 12ns/92ns
Test Condition: 400V, 40A, 6 Ohm, 15V
Reverse Recovery Time (trr): 36ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Part Number: FGH40N60
Description

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FGH40N60SMD is a robust and fast switching Insulated Gate Bipolar Transistor (IGBT) that is typically used for controlling high power applications. It is mainly used in the fields of welding, Uninterruptible Power Supplies (UPS), solar inverters, induction cookers and Automotive applications. FGH40N60SMD has an excellent short circuit ruggedness and fast switching speeds, compared to the standard MOSFETs and regular IGBTs.

FGH40N60SMD is an ideal choice for high power applications that require low switching losses and high ruggedness. It has a number of characteristics that make it suitable for applications that are more demanding than standard MOSFETs and IGBTs. These characteristics include low drive current, faster switching frequencies and higher breakdown voltages.

FGH40N60SMD is a single IGBT device, meaning that it contains all the necessary components for operation. It, just like the other IGBTs, consists of four layers, namely: an insulation layer, a gate layer, a collector layer, and an emitter layer. An IGBT device is a three-terminal device that allows current to flow in either direction when the gate voltage is at a certain minimum level. The gate voltage controls the current flow between the collector and emitter.

The working principle of FGH40N60SMD is quite simple. When a minimum gate voltage is applied to the gate of FGH40N60SMD, the electrons on the emitter side will get excited and leave their respective orbits, thereby making the emitter-collector junction slightly negative. This causes a depletion layer to form, which further prevents current from passing through the device. However, when the gate voltage is increased, the electrons will be repelled from the gate towards the emitter layer, resulting in the formation of holes in the collector layer. This allows the current to flow from the collector to the emitter, thereby enabling the device to switch on. The opposite effect occurs when the gate voltage is decreased and the device is rendered off.

FGH40N60SMD is a highly reliable device for controlling high power applications such as welding, Uninterruptible Power Supplies (UPS), solar inverters, induction cookers and Automotive applications. It is equipped with excellent short-circuit ruggedness and fast switching speeds that makes it a much better alternative to the standard MOSFETs and IGBTs. Its working principle is fairly straightforward and thus, it is relatively easy to understand how it works and how long it will last.

The specific data is subject to PDF, and the above content is for reference

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