FGH40T65SQD_F155

Switching Energy:	138µJ (on), 52µJ (off)
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	31.8ns
Test Condition:	400V, 10A, 6 Ohm, 15V
Td (on/off) @ 25°C:	16.4ns/86.4ns
Gate Charge:	80nC
Input Type:	Standard
Series:	--
Power - Max:	238W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 40A
Current - Collector Pulsed (Icm):	160A
Current - Collector (Ic) (Max):	80A
Voltage - Collector Emitter Breakdown (Max):	650V
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Lead Free Status / RoHS Status:	--
Part Status:	Active

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Transistors - IGBTs - Single

The FGH40T65SQD_F155 is an insulated-gate bipolar transistor (IGBT) that belongs to a class of power semiconductor devices. This component is being used in an increasing number of motor-driver, motor control and power-conversion designs. It is capable of switching at voltages up to 650V, which enables it to be used in a wide range of applications. This article outlines the application field and working principle of FGH40T65SQD_F155 IGBT.

Application Field

The FGH40T65SQD_F155 IGBT can be used in a number of applications, including power supplies, AC drives, variable frequency drives, motors, inverters, power converters, DC/DC converters, UPS systems, welding machines and traction applications. It is an ideal choice for high-power drive applications, such as motor drives. It can also be used in applications that require fast switching and high-power circuit protection.

Working Principle

The FGH40T65SQD_F155 IGBT is composed of two components: an insulated gate field effect transistor (IGFET) and a bipolar transistor. The IGFET is responsible for controlling current flow, while the bipolar transistor is used to amplify current and increase switching speed.When the switching voltage applied to the gate exceeds the breakdown voltage, the IGBT turns on and current begins to flow through the device. This current is given shape and direction by the vertical structures on the chip, which are called the collector and the emitter. The current flow is then further enhanced by the junction of the n+ semiconductor material and the p-type collector. This junction is also known as the pn-junction. The pn-junction is responsible for the amplification of the current by controlling the voltage applied to the gate. When the current is amplified, it flows through the vertical structures on the chip, which are considered the collector and the emitter. The current then creates a magnetic field, which induces voltage in the coil. This inducing of voltage is what powers the motor.The FGH40T65SQD_F155 IGBT is a powerful and reliable component that can be used in many different applications. It can switch at high voltages and can be used to control and power motors and other power-conversion devices.

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