FGH40T65SH-F155 Discrete Semiconductor Products

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	120A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 40A
Power - Max:	268W
Switching Energy:	1.01mJ (on), 297µJ (off)
Input Type:	Standard
Gate Charge:	72.2nC
Td (on/off) @ 25°C:	19.2ns/65.6ns
Test Condition:	400V, 40A, 6 Ohm, 15V
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 Long Leads

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Introduction

FGH40T65SH-F155 is an Insulated Gate Bipolar Transistor (IGBT). This type of transistor is composed of both MOSFET and bipolar junction transistor technologies. It is much more efficient than a standard bipolar junction transistor, making it suitable for many applications. This article will look at the FGH40T65SH-F155\'s application field and working principle.

Application field

The FGH40T65SH-F155 is used in many industrial application, such as motor controllers, inverters and Uninterruptible Power Supplies (UPSs). It is also used for renewable energy systems such as solar power, fuel cells, and wind turbines. In consumer electronics, IGBTs can be found in AM/FM radios, televisions and DVD players.

Working principle

The FGH40T65SH-F155 has two distinct parts: the MOSFET and the bipolar junction transistor. The MOSFET is a voltage-controlled switch, meaning it can be turned on or off by changing the voltage on its gate. The other part, the bipolar junction transistor, is an amplifier, at its simplest, its purpose is to increase the gain of input signals. When combined, the two parts of the FGH40T65SH-F155 can switch outputs with greater efficiency. When the MOSFET is on, the current flows from the source to the drain and output is increased. When the MOSFET is off, the current flows through the bipolar junction transistor, reducing the current flow and output voltage. In either case, the FGH40T65SH-F155 can minimize power losses, making it more efficient than a purely bipolar junction transistor.

Conclusion

The FGH40T65SH-F155 is an IGBT transistor with applications in industrial, consumer, and renewable energy systems. Its combination of MOSFET and bipolar junction transistor technologies allows it to switch outputs with increased efficiency, minimizing power losses. Its ability to reduce power losses make it a popular choice in many applications, ranging from motor controllers to AM/FM radios.

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