Allicdata Part #: | FGH40T70SHD-F155-ND |
Manufacturer Part#: |
FGH40T70SHD-F155 |
Price: | $ 3.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | 650V FS GEN3 TRENCH IGBT |
More Detail: | IGBT Trench Field Stop 700V 80A 268W Through Hole ... |
DataSheet: | FGH40T70SHD-F155 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 3.03030 |
10 +: | $ 2.72286 |
100 +: | $ 2.23077 |
500 +: | $ 1.89904 |
1000 +: | $ 1.60160 |
Series: | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Voltage - Collector Emitter Breakdown (Max): | 700V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 40A |
Power - Max: | 268W |
Switching Energy: | 1.15mJ (on), 271µJ (off) |
Input Type: | Standard |
Gate Charge: | 69nC |
Td (on/off) @ 25°C: | 22ns/66ns |
Test Condition: | 400V, 40A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 37ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
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The FGH40T70SHD-F155 is an insulation gate bipolar transistor (IGBT) belonging to the family of single IGBTs. Like all IGBTs, it is a combination of a bipolar junction transistor and a MOSFET transistor. Its main function is to amplify electrical signals, allowing them to be transmitted over long distances. It is suitable for a wide range of applications including power converters, telecommunications, automotive, and industrial electronics.
The FGH40T70SHD-F155 is comprised of n-channel enhancement mode IGBT and resistive p-channel FT MOSFET chips. It is a low voltage, low power transistor and is capable of handling current up to 40A and voltage up to 150V. The transistor can operate up to 7 kHz frequency with a low collector-emitter saturation voltage of 1.2 V. The FGH40T70SHD-F155 is designed for applications in switch-mode power supplies, motor drives and any other application that requires low conduction losses.
The FGH40T70SHD-F155 is designed to provide superior performance when it comes to switching losses, switch node voltage losses, reverse recovery losses and EMI (electromagnetic interference) losses. The IGBT also features a fast turn-off time, which aids in controlling the voltage drop across the collector-emitter junction. The fast turn off time also helps reduce the peak current during turn-on, thus reducing switching losses. Additionally, the IGBT is capable of controlling primary-side transistors, allowing the system to accurately control the current and voltage.
The working principle of the FGH40T70SHD-F155 is enabled by the operation of its n-channel enhancement MOSFET and the bi-polar transistor. The main function of the IGBT is to control the amount of current that is allowed to flow through its drain and source. When the voltage is applied at the gate, the electrons from the n-channel MOSFET transfers to the p-channel FT MOSFET to form an inversion layer which allows current to flow across the junction. This current flow can then be controlled by varying the voltage applied at the gate.
The FGH40T70SHD-F155 is typically used in direct current to alternating current conversion, motor control and different types of power supplies. It is also used for low voltage applications, including clock generators, switching applications and AC line drivers. Additionally, it is used in solar power systems and automotive applications such as traction motors, alternator circuits and engine controls.
In conclusion, the FGH40T70SHD-F155 is an IGBT belonging to the family of single IGBTs. It is used in a wide variety of applications including power converters, telecommunications, automotive and industrial electronics. The transistor is capable of handling current up to 40A and voltage up to 150V and the working principle is enabled by the operation of its n-channel enhancement MOSFET and the bi-polar transistor. It is designed to provide superior performance with regard to switching losses, switch node voltage losses, reverse recovery losses and EMI losses.
The specific data is subject to PDF, and the above content is for reference
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