Allicdata Part #: | FGH40N60SMD-F085-ND |
Manufacturer Part#: |
FGH40N60SMD-F085 |
Price: | $ 3.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 80A 349W TO-247-3 |
More Detail: | IGBT Field Stop 600V 80A 349W Through Hole TO-247-... |
DataSheet: | FGH40N60SMD-F085 Datasheet/PDF |
Quantity: | 434 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 3.45870 |
10 +: | $ 3.10401 |
100 +: | $ 2.54337 |
500 +: | $ 2.16511 |
1000 +: | $ 1.82599 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.5V @ 15V, 40A |
Power - Max: | 349W |
Switching Energy: | 920µJ (on), 300µJ (off) |
Input Type: | Standard |
Gate Charge: | 180nC |
Td (on/off) @ 25°C: | 18ns/110ns |
Test Condition: | 400V, 40A, 6 Ohm, 15V |
Reverse Recovery Time (trr): | 47ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247-3 |
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FGH40N60SMD-F085 is a single insulated gate bipolar transistor (IGBT) developed by Panasonic. It is composed of an emitter, collector, gate and base. The device is designed to operate efficiently at high power levels and has been optimized to be suitable for voltage and current amplifier applications. FGH40N60SMD-F085 is available in a TO-252 packaging, making it ideal for prototyping and lab use.
FGH40N60SMD-F085 is suitable for applications such as high-efficiency motor drives, dc-dc converters, solar inverters, and Class D audio amplifiers. The device has a high current capability of 85A, and can handle up to 600V of voltage, making it an ideal choice for many medical and industrial applications. The onboard protection features and high-temperature operation make the device an excellent choice for extended life applications.
The superior performance of FGH40N60SMD-F085 is due to its operating principle. In this type of device, current flows through the base and the collector, which is connected to the emitter. The collector is then connected to the high voltage terminal of the device, which is used to control the current flow. When a positive voltage is applied to the gate terminal, the base will become more positive, allowing more current to flow through, and increasing the voltage across the collector and emitter. This increased voltage can be used to amplify the signal applied to the gate terminal.
The device\'s protection features and high temperature operation can be attributed to its integrated gate design. The gate of FGH40N60SMD-F085 is designed to sense both current and voltage, ensuring that the device remains within the specified operational parameters. Additionally, the gate will shut down completely when the temperature exceeds a certain threshold, protecting the device from thermal damage.
In summary, FGH40N60SMD-F085 is an ideal single IGBT for applications requiring high power, robustness and efficiency. Its integrated protection features and high temperature operation make it well-suited for long-term, high-power applications. Its operating principle allows for efficient and reliable voltage and current amplification, making it the perfect choice for many industrial and medical applications.
The specific data is subject to PDF, and the above content is for reference
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