FGH40N6S2 Discrete Semiconductor Products

The FGH40N6S2 is a single insulated gate bipolar transistor (IGBT) from Fairchild Semiconductor. It is designed for use in high current and voltage modulation circuits that require a fast switching speed. This transistor is based on a vertical double-diffused N-channel MOSFET structure, with a PNPN diode for the anti-parallel collector. The transistor offers a high current density with a rated current of 40A and a low saturation voltage of 2.0V.

This transistor can be used in a number of applications, including motor control, power management, solid-state relays, solar cell interconnects, uninterruptible power supplies, and industrial control. The FGH40N6S2 has a collector-emitter voltage rating of 600V and a collector-emitter saturation voltage of 1.3V. The output is capable of handling a maximum current of 40A and a maximum power of 7.2kW.

The working principle of the FGH40N6S2 is based on the bipolar principle. Bipolar transistors are two-terminal solid-state switching devices that can be used to modulate the current between two points in a circuit. When the base voltage is applied to the transistor, a current is generated in the base-collector junction. This current is called the collector current, and its magnitude is determined by the level of the base voltage. The collector current, in turn, controls the current between the emitter-collector junction, ultimately controlling the voltage across the two points. Since the collector current can be modulated simply by varying the base voltage, the FGH40N6S2 can be used to control the voltage between two points in a circuit.

The collector-emitter voltage of the FGH40N6S2 is adjustable over a wide range from 400V to 600V, allowing for precision voltage control. The switching speed of the transistor is very fast, allowing for rapid changes in the output voltage. The low saturation voltage of the transistor also helps to reduce power losses, as less power is wasted in the form of heat.

The FGH40N6S2 is a highly reliable transistor that can be used in a wide variety of applications requiring precision voltage control. Its low saturation voltage and fast switching speed make it the ideal choice for power system design and operation. The transistor is easy to use and offers excellent performance in both industrial and consumer applications.