Allicdata Part #: | FGH40T120SQDNL4OS-ND |
Manufacturer Part#: |
FGH40T120SQDNL4 |
Price: | $ 5.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 40A UFS FOR SO |
More Detail: | IGBT Trench Field Stop 1200V 160A 454W Through Hol... |
DataSheet: | FGH40T120SQDNL4 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 4.66200 |
10 +: | $ 4.20966 |
100 +: | $ 3.48529 |
500 +: | $ 3.03496 |
1000 +: | $ 2.64335 |
Series: | -- |
Part Status: | Active |
Lead Free Status: | Lead free |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 160A |
Current - Collector Pulsed (Icm): | 160A |
Vce(on) (Max) @ Vge, Ic: | 1.95V @ 15V, 40A |
Power - Max: | 454W |
Switching Energy: | 1.4mJ (on), 1.1mJ (off) |
Input Type: | Standard |
Gate Charge: | 221nC |
Td (on/off) @ 25°C: | 46ns/220ns |
Test Condition: | 600V, 40A, 10 Ohm, 15V |
Reverse Recovery Time (trr): | 166ns |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-4 |
Supplier Device Package: | TO-247-4L |
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An insulated gate bipolar transistor (IGBT) is a power semiconductor device with one or more terminals that are insulated from the semiconductor substrate. It is composed of two main components, a gate-insulated thyristor, also known as a thyristor with a gate, and an insulated gate field-effect transistor (IGFET). The FGH40T120SQDNL4 is a type of IGBT device used in many industrial applications.
Application Field and Working Principle of FGH40T120SQDNL4
The FGH40T120SQDNL4 is a type of power semiconductor device that can be used in applications such as motor control, power traction, regenerative braking, and UPS (uninterruptible power supply) systems. The device can also be used to build high-efficiency power converters and inverters for renewable energy systems such as solar power and wind turbines.
The FGH40T120SQDNL4 has both a collector-emitter and an insulated gate that is separately driven by applied voltages. It has a high breakdown voltage, excellent thermal stability, and superior switching performance, allowing it to handle large currents. It can operate at very high junction temperatures. The FGH40T120SQDNL4 is well-suited for use in high-current applications, as it can be effectively controlled by the gate voltage.
The device\'s working principle is based on the switching behavior of two independent component structures: the bipolar junction transistor (BJT) and the junction field-effect transistor (JFET). The BJT section acts as a current amplifier, while the JFET section acts as an input switch. Both sections are separately driven by applied voltages, allowing the FGH40T120SQDNL4 to be easily and accurately controlled.
The operating principles of the FGH40T120SQDNL4 are very similar to those of a standard IGBT. When the gate voltage is low, the BJT section is in a cut-off state, and the JFET section is in an off state. When the gate voltage is applied, the BJT section is saturated and begins to conduct current from the collector to the emitter. At the same time, the JFET section is turned on, allowing the conduction of current from the collector to the emitter.
The FGH40T120SQDNL4 is designed for high-power applications, allowing it to be used in a variety of applications such as motor control, UPS, and renewable energy systems. Due to its robust nature, it offers superior switching performance, high efficiency, and excellent thermal stability. This makes it a popular choice for use in many industrial applications.
The specific data is subject to PDF, and the above content is for reference
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