FGH40T65SPD-F085 Allicdata Electronics
Allicdata Part #:

FGH40T65SPD-F085-ND

Manufacturer Part#:

FGH40T65SPD-F085

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: AUTOMOTIVE 650V FS GEN3
More Detail: IGBT NPT 650V 80A 267W Through Hole TO-247
DataSheet: FGH40T65SPD-F085 datasheetFGH40T65SPD-F085 Datasheet/PDF
Quantity: 192
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 192Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: NPT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 267W
Switching Energy: 1.16MJ (on), 270µJ (off)
Input Type: Standard
Gate Charge: 36nC
Td (on/off) @ 25°C: 18ns/35ns
Test Condition: 400V, 40A, 6 Ohm, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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FGH40T65SPD-F085 is a single IGBT (insulated-gate bipolar transistor) manufactured by the company “Nextron, Inc”. It is a high power switch designed for power systems. This device features high breakdown voltage (650V), high inflation current gain (20A), low on-state voltage drop, short-circuit withstand capability, and fast switching speed. It is suitable for various applications such as AC and DC motor control, UPS, solar/wind system control, power management, EMI/EMC filters, electric vehicles and drives, and voltage converter applications.

The working principle of an IGBT is based on the combination of the advantages of metal-oxide-semiconductor field-effect transistors (MOSFET) and bipolar junction transistors (BJT). Its structure is composed of a p-type and n-type MOSFET base for the input and an NPN-type bipolar junction transistor as the output. This unique configuration allows the device to have the high input impedance of MOSFET and the low voltage drop of BJT. When a certain voltage is applied to the IGBT’s gate, a current flows between the source-drain region, turning the IGBT in the on-state. In the on-state, the IGBT works like a switch and it can be used to control the flow of current in the power circuit.

The FGH40T65SPD-F085 is best suited for applications where high power and high switching speed are essential. It is widely used in power systems, AC and DC motor control, UPS, solar/wind system control, power management, EMI/EMC filters, electric vehicles and drives, and voltage converter applications. It has a maximum collector current of 40Amps, a maximum collector-emitter voltage of 650V, and a maximum junction temperature of 175°C.

The FGH40T65SPD-F085 is an ideal choice for high power applications, for it is highly reliable and has a long operating life. Its high breakdown voltage provides protection from voltage fluctuations and power surges, while its low voltage drop helps improve efficiency. It is also capable of handling high current and high temperature, offering higher reliability and longer life.

In summary, the FGH40T65SPD-F085 is a reliable, high power switch designed for power systems. It features a high breakdown voltage and inflation current gain, a low on-state voltage drop, short-circuit withstand capability, and fast switching speed. It is suitable for a wide range of applications such as AC and DC motor control, UPS, solar/wind system control, power management, EMI/EMC filters, electric vehicles and drives, and voltage converter applications.

The specific data is subject to PDF, and the above content is for reference

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