FGH40N6S2D Allicdata Electronics

FGH40N6S2D Discrete Semiconductor Products

Allicdata Part #:

FGH40N6S2D-ND

Manufacturer Part#:

FGH40N6S2D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 75A 290W TO247
More Detail: IGBT 600V 75A 290W Through Hole TO-247
DataSheet: FGH40N6S2D datasheetFGH40N6S2D Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Obsolete
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 75A
Current - Collector Pulsed (Icm): 180A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Power - Max: 290W
Switching Energy: 115µJ (on), 195µJ (off)
Input Type: Standard
Gate Charge: 35nC
Td (on/off) @ 25°C: 8ns/35ns
Test Condition: 390V, 20A, 3 Ohm, 15V
Reverse Recovery Time (trr): 48ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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The FGH40N6S2D is a single IGBT from Fuji Electric. IGBTs are commonly used to serve as a power source in a wide range of applications, such as automotive and industrial systems, as well as consumer goods. The FGH40N6S2D is designed to be an efficient, reliable and cost-effective solution for application in these areas.

An IGBT is a type of transistor which combines the benefits of both BJT and MOSFET transistors. It is a voltage-controlled device, with high current and voltage capabilities, which allows it to be used in power applications. It has a low forward voltage drop, meaning less power is lost as heat, making IGBTs much more efficient than their BJT counterparts. IGBTs are also more reliable, as they can withstand higher temperatures, allowing them to be used in more demanding applications. The FGH40N6S2D is a single IGBT, meaning it has just one collector-emitter junction, and is therefore suitable for applications which require only a small amount of current.

The FGH40N6S2D has a voltage rating of 400V and a current rating of 40A. Its Collector-Emitter Breakdown Voltage is 950V, and its Gate-Emitter Threshold Voltage is 2V. This means it can be used in a wide range of applications, including automotive inverters, servo motors, high-power switching and industrial automation systems.

The FGH40N6S2D has a power efficiency of 97%, meaning it is able to reduce heat dissipation and improve overall system performance. It also has a low on-state gate charge (QG) of 13nC, which translates to a low switching power loss, making it ideal for high-voltage, high-frequency applications, such as AC drives and solar photovoltaic systems.

The FGH40N6S2D has a soft turn-off, which allows for a slower discharge of current when switching off and helps to increase the lifetime of the device. Additionally, it has a low stored gate charge that helps to reduce turn-on losses, making it highly reliable in applications where a consistent performance is required.

In terms of packaging, the FGH40N6S2D comes in a module type package, which is designed to provide high thermal performance to the device, and it is ready for easy mounting and cooling. This makes the FGH40N6S2D very suitable for the construction of high-power switching systems.

Overall, the FGH40N6S2D is an ideal single IGBT for a wide range of power applications, including automotive systems, consumer goods, industrial automation and solar photovoltaic systems. Its efficiency, reliability and low on-state gate charge make it highly suitable for these applications, and its low power dissipation and high thermal performance are also key benefits. The FGH40N6S2D is a cost-effective and reliable solution, which makes it an ideal choice for power applications.

The specific data is subject to PDF, and the above content is for reference

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