FJNS3215RBU Allicdata Electronics
Allicdata Part #:

FJNS3215RBU-ND

Manufacturer Part#:

FJNS3215RBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PREBIAS NPN 300MW TO92S
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: FJNS3215RBU datasheetFJNS3215RBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

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The FJNS3215RBU is a single, pre-biased, bipolar junction transistor (BJT) that is used to control a wide range of electrical circuits. This type of transistor has the ability to control a large amount of power while using a minimal amount of current. The FJNS3215RBU is capable of handling 600 volts with a maximum current of 15 amps.

Application Field of FJNS3215RBU

The FJNS3215RBU is designed primarily for power supply applications, such as hit and hold circuits, or high voltage and current drive. This type of transistor is also suitable for level shift and power switching, as well as high voltage inverter and relay control. Its relatively low capacitance also makes it ideal for load switching.

The FJNS3215RBU is also suitable for use in the audio industry for high voltage, regulated power supplies. This type of transistor is ideal for amplifiers because it offers very low distortion levels and excellent noise rejection. In addition, its low capacitance makes it well-suited for use in high-impedance circuits.

The FJNS3215RBU can also be used in industrial circuits, including motor control and lighting control applications.

Working Principle of FJNS3215RBU

The FJNS3215RBU is a three-terminal device, consisting of two p-type and one n-type layers. The electrical current is controlled through the application of a voltage across the two p-type and one n-type layers. This type of transistor operates in a similar way to an electronic switch. When a voltage is applied to the base terminal, it creates a current flow between the collector and emitter and allows current to flow from the collector to the emitter.

The FJNS3215RBU is designed to be pre-biased. This means that the base voltage is held at a certain voltage level even before the application of the external control voltage. This is beneficial because it helps to prevent unwanted switching of the transistor, which could result in malfunctions. The bias voltage, known as the collector-base (CB) bias, works in conjunction with the external control voltage.

The FJNS3215RBU is designed to be a linear transistor. This means that the output is proportional to the input. The voltage across the collector and the emitter will be directly proportional to the voltage that is applied to the base terminal.

The FJNS3215RBU is designed to be immune from thermal runaway. This means that even if the transistor is subjected to rapid power cycling or frequent short circuits, it will not become unstable and cause permanent damage. This is important for maintaining the reliability of the device.

Conclusion

The FJNS3215RBU is a single, pre-biased, bipolar junction transistor (BJT) that is used to control a wide range of electrical circuits. This type of transistor is suitable for a variety of applications, including power supplies, amplifiers, motor control, and lighting control. The FJNS3215RBU is designed to be pre-biased, which helps to prevent unwanted switching of the transistor and maintain its reliability. Additionally, the FJNS3215RBU operates in a linear manner and is immune to thermal runaway.

The specific data is subject to PDF, and the above content is for reference

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