Allicdata Part #: | FQD630TF-ND |
Manufacturer Part#: |
FQD630TF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 7A DPAK |
More Detail: | N-Channel 200V 7A (Tc) 2.5W (Ta), 46W (Tc) Surface... |
DataSheet: | FQD630TF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 46W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
?FQD630TF, a vertical copper alloy complementary metal–oxide–semiconductor field-effect transistor (CoMOS FET or CMOS FET), is a three-terminal semiconductor device used for controlling electrical signals on a variety of different types of equipment, ranging from simple household appliances to sophisticated industrial equipment. It is used to control the direction of electrical current, voltage, and other electronic signals which makes it a popular choice in many industries.
The FQD630TF is a combination of two N-channel field effect transistors and one P-channel field effect transistor. This device is capable of controlling the amount of current and voltage which can flow through the external circuit and also gives it the capability of providing high switching speed with low power dissipation which is one of the main advantages of using this device. It can be used to generate high frequency signals, and it is also used as an audio preamplifier. It can also be used as an oscillator in some applications.
The FQD630TF is based on the principle of MOSFET which stands for metal–oxide–semiconductor field-effect transistor. In this type of FET, there is an oxide layer between the gate and the channel. The oxide layer provides electrical insulation, which allows the application of electric field to modulate the current flow through the channel. This further enables the FET to control current and voltage which in turn makes it a powerful and versatile tool for controlling electrical signals.
The FQD630TF has three principal applications in a variety of industries. First, it is a versatile choice for controlling voltage and current applications. Secondly, it is used as an audio preamp and oscillator in the electronics and audio industries. Lastly, it is also used in electric vehicle applications since it is a low-power, high-efficiency device.
In the electric vehicle industry, the FQD630TF is used because of its low power, low switching speed and high efficiency. The low power dissipation makes it an ideal source for a power train, and the low switching speed allows for better control of the vehicle’s acceleration and braking which helps in terms of providing more efficient power use and improving the overall performance of the vehicle.
In an audio application, the FQD630TF is used in the preamp and oscillator stages. The FQD630TF is capable of providing high signal to noise ratio (SNR) and low distortion. This makes it an ideal choice for audio and musical instrument applications since it can generate high-quality audio signals with minimal noise.
In controlling voltage and current, the FQD630TF is an ideal choice because of its wide range of operating voltage and current, making it ideal for use in various types of circuits. The wide range allows for various different levels of intensity of the signal as well as different range of frequencies. This makes it a perfect device for controlling various circuit operation applications.
The FQD630TF is a versatile device that can be used for various different applications. It is a powerful and efficient tool for controlling a variety of electrical signals, and it can be used in audio applications, electric vehicle applications, and voltage and current applications. With its wide range of capabilities, the FQD630TF is a great choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
FQD6N60CTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 4A DPAKN... |
FQD6N50CTM_F080 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A DPA... |
FQD6N25TF | ON Semicondu... | -- | 1000 | MOSFET N-CH 250V 4.4A DPA... |
FQD630TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 200V 7A DPAKN... |
FQD630TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 200V 7A DPAKN... |
FQD6N40CTF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 4.5A DPA... |
FQD6P25TM | ON Semicondu... | -- | 1000 | MOSFET P-CH 250V 4.7A DPA... |
FQD6P25TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 250V 4.7A DPA... |
FQD6N50CTF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 4.5A DPA... |
FQD6N40TM | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 4.2A DPA... |
FQD6N40TF | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 400V 4.2A DPA... |
FQD6N25TM | ON Semicondu... | -- | 1000 | MOSFET N-CH 250V 4.4A DPA... |
FQD6N50CTM | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 4.5A DPA... |
FQD6N40CTM | ON Semicondu... | -- | 2500 | MOSFET N-CH 400V 4.5A DPA... |
FQD6N60CTM-WS | ON Semicondu... | 0.53 $ | 1000 | MOSFET N-CH 600V DPAKN-Ch... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...