FQD6P25TM

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	780pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	27nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1.1 Ohm @ 2.35A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.7A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FQD6P25TM Application Field and Working Principle

The FQD6P25TM is a P-channel transistor designed for high-power applications. It was designed primarily to replace older PNP and NPN transistors in large-scale integrated circuits, but it can also be used in a variety of other applications. The FQD6P25TM is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is especially useful in applications requiring high switching speeds and/or low power consumption.

Overview

The FQD6P25TM is a single P-channel MOSFET protected by a top-side p-type guard-ring (PG) termination. It operates with the source and drain connection connected to the positive and negative terminals (respectively) of a supply voltage (VDS) applied across it. It also requires a positive gate-source voltage (Vgs) in order to turn on. The FQD6P25TM has a maximum voltage rating of 200V and a drain-source current capacity of 25A.

Features and Benefits

The FQD6P25TM has some major advantages that make it well-suited for a variety of applications. Firstly, the p-type guard-ring (PG) termination increases device reliability by preventing electrostatic discharge damage. Secondly, the FQD6P25TM has very low gate-to-drain capacitance, which allows for high-speed switching and low power consumption. The FQD6P25TM also has very low input impedance due to the low gate-to-source capacitance. Lastly, the FQD6P25TM has a low gate threshold voltage, which allows it to easily switch on at a lower voltage than other MOSFETs.

Applications

The FQD6P25TM is used in many different applications. It is often used in large-scale integrated circuits as a replacement for older PNP and NPN transistors. Additionally, the FQD6P25TM is used for power switching applications in audio amplifiers, electric vehicles, industrial equipment, and robotic systems. It can also be used in battery charging systems and for various types of digital signal processing.

Working Principle

The FQD6P25TM operates as a field-effect transistor, where the electric field from a gate voltage controls the current flow between the source and the drain. When a positive voltage (Vgs) is applied to the gate, it forms an inversion layer over the surface of the transistor. This inversion layer allows electric current to flow between the source and the drain. As the voltage increases, the current flowing through the transistor increases exponentially.When the FQD6P25TM is turned off, the electric field from the gate is not strong enough to form an inversion layer and the current ceases to flow between the source and drain. The FQD6P25TM also has a gate-threshold voltage (Vth) which is the minimum voltage required to form an inversion layer and allows current to flow.

Conclusion

The FQD6P25TM is a single P-channel MOSFET designed for high-power applications. It operates with a source and drain connection connected to a positive and negative terminal, respectively, of a supply voltage applied across it. The FQD6P25TM has some major advantages, such as a p-type guard-ring termination for increased device reliability and low gate-to-drain capacitance for increased switching speed. Additionally, the FQD6P25TM has a low gate threshold voltage and is used in a variety of applications, such as audio amplifiers and robotic systems. The FQD6P25TM works on the principle that a positive voltage applied to the gate creates an inversion layer, which allows electric current to flow between the source and the drain.

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