FQD630TM Allicdata Electronics
Allicdata Part #:

FQD630TM-ND

Manufacturer Part#:

FQD630TM

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 200V 7A DPAK
More Detail: N-Channel 200V 7A (Tc) 2.5W (Ta), 46W (Tc) Surface...
DataSheet: FQD630TM datasheetFQD630TM Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FQD630TM is a type of field effect transistor (FET), which is a type of transistor that relies on an electric field to control the movement of electric charge carriers, allowing for amplification and switching capabilities. It is a commonly used type of transistor in modern electronics and has been a cornerstone of the electronics revolution since its invention in the late 1950s. FQD630TM is a single, general purpose MOSFET (metal-oxide-semiconductor field-effect transistor) that has characteristics suitable for a wide range of switching and amplification applications.

The FQD630TM operates using the principle of channel enhancement. When the gate terminal is positively charged, a channel forms in the substrate, known as an inversion layer. The electrons in this layer then become the charge carriers, flowing into the source and out through the drain, with the gate terminal controlling the magnitude of the current. This is called enhancement mode operation, as the channel is created in response to the gate voltage.

In addition to its use in amplification and switching, the FQD630TM can also be used for voltage regulation. Its self-limiting current capability allows for the regulation of current across its terminals, providing a constant voltage-current curve. This is useful in protecting other components from over-current conditions. The FQD630TM is also able to operate at higher temperatures and at higher voltages than many other types of field effect transistors.

The FQD630TM is suitable for many different applications. It can be used for logic level shifting, such as in TTL (transistor-transistor logic) circuits; for providing a constant voltage supply to other components; for signal amplification; and for changing the impedance of an electrical circuit. It can also be used in power supplies, switching circuits and motor drives. In general, the FQD630TM is well-suited to applications that require low power consumption, low noise, high switching speed and good reliability.

The FQD630TM is a versatile and efficient field effect transistor that provides a wide range of applications and benefits in electronic circuits. Its self-limiting current capability provides protection for other components, and its flexibility and reliability make it a popular choice for many different types of applications. Its ability to operate at high temperatures and high voltages make it a great choice for many industrial and commercial applications, and its versatility makes it ideal for use in a wide range of circuits.

The specific data is subject to PDF, and the above content is for reference

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