FQD6N40CTF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 48W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	625pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	1 Ohm @ 2.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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FQD6N40CTF is a type of field-effect transistor (FET) that is commonly used for analog and switch applications. By controlling the width of the oxide channel between source and drain the source-drain current is regulated. FQD6N40CTF is a high voltage (600V) MOSFET designed for general purpose power switching and is suitable for used in applications such as motor control, lighting, switching power supplies and DC-to-DC converters. The FQD6N40CTF uses a MOSFet (Metal-Oxide-Semiconductor Field Effect Transistor) construction which has a current conduction channel formed between source and drain when a gate voltage (VG) is applied. The voltage that must be applied to the gate to establish current conduction is referred to as the threshold voltage (Vth). As the gate voltage increases, the current conduction increases linearly with an increasing positive-gate voltage. The FQD6N40CTF has a low on state resistance, allowing it to operate without any significant power dissipation when conducting, thus making it suitable for wide range of high-power switching applications. It also has a very low capacitance. This low capacitance is due to the low-conductivity of the insulator between the gate and the silicon substrate.In addition, this type of MOSFET exhibits good switching behavior. That is, it can switch between on and off quickly. This makes it suitable for switching applications, especially those which require higher speeds and high power. Additionally, the FQD6N40CTF has an isolation rating of 600 volts, so it can be used in high voltage environments.Finally, the device has a low gate-to-source leakage current, meaning that it will not be easily overloaded by gate voltages from other electrical components. This makes it ideal for power control applications. Overall, the FQD6N40CTF is a great choice for both switch and analog applications due to its low on state resistance and switching speed, as well as its high insulation rating. It also has a low gate-to-source leakage current, making it ideal for power control applications. This makes it a great choice for a variety of applications, particularly high-power and high-speed applications.

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