FQD6N25TM Discrete Semiconductor Products

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The FQD6N25TM is a type of field-effect transistor (FET) that is specially designed for medium-to-high power and low cost applications. It is designed to be an integrated, compact and low-cost solution for applications in automotive, industrial and other power management applications. In addition, the FQD6N25TM offers a wide range of features, such as low on-resistance, low gate-source capacitance, and fast switching times. As a result, the FQD6N25TM is a great choice for medium-to-high power applications, including those that require power efficiency, fast switching times and cost effectiveness.

The FQD6N25TM is an Enhancement mode Metal-Oxide-Semiconductor Field-effect transistor (MOSFET). A MOSFET is a type of transistor which uses electric fields to control the movement of current. The FQD6N25TM works on the principle that as the voltage at the Gate (G) pin is increased, the depletion region grows and the electron flow is reduced, which leads to a decrease in the current flow. This can be seen in the figure below.

The FQD6N25TM is a single channel device, which means that it controls the movement of a single switch. It is designed to be used in a wide variety of applications where medium to high power and low cost are important. These applications include automotive, industrial and other power management applications, such as power supply design, power converters and electronic control systems. The FQD6N25TM is also suitable for using in high-frequency power conversion and high-speed switching systems.

The FQD6N25TM has a maximum drain-source voltage rating of 250V and a maximum drain current of 30A. It is also capable of switching speeds up to 40V/µs, which makes it suitable for use in high-speed switching applications. The FQD6N25TM is available in a variety of packages, including TO-220, TO-262, and TO-264. The TO-220 package is designed to dissipate up to 150W, and the TO-262 package is designed to dissipate up to 75W.

In summary, the FQD6N25TM is an Enhancement mode MOSFET that is specifically designed for medium-to-high power applications. It is a single channel device with a maximum drain-source voltage rating of 250V and a maximum drain current of 30A. It is capable of switching speeds up to 40V/µs, and it is available in a variety of packages. The FQD6N25TM is an ideal choice for applications that require power efficiency, fast switching times and cost effectiveness.

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