FQD6N50CTM Discrete Semiconductor Products |
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Allicdata Part #: | FQD6N50CTMTR-ND |
Manufacturer Part#: |
FQD6N50CTM |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 4.5A DPAK |
More Detail: | N-Channel 500V 4.5A (Tc) 2.5W (Ta), 61W (Tc) Surfa... |
DataSheet: | FQD6N50CTM Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 61W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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:The FQD6N50CTM MOSFET is a type of Field Effect Transistor (FET) which processes signals electronically and controls current flow. It has a wide range of applications and can be used in switching and amplifier circuits. This article discusses the principles of operation and its application fields.
What is an FQD6N50CTM MOSFET?
The FQD6N50CTM MOSFET is an enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a four-terminal device with a source, drain, gate, and body. The source and drain are the two electrical terminals of a conducting channel between them. The gate is used to control this channel. The body controls the voltage of the gate.
FQD6N50CTM MOSFET Working Principle
A MOSFET works by using a gate that is separated from the rest of the device by a thin layer of oxide. The gate contains an electrical charge, which creates an electric field that affects the flow of electrons between the source and drain. This electric field can be used to control the amount of current flowing through the device.
In enhancement-mode transistors like the FQD6N50CTM MOSFET, no current is allowed to flow when the voltage at the gate is zero volts. As the gate voltage is increased, the electric field changes, and electrons can flow through the device. This allows the source-to-drain current to be controlled by the gate voltage.
FQD6N50CTM Application Fields
The FQD6N50CTM MOSFET is a versatile device suitable for a wide range of applications. It has a wide range of frequency response and low on-state resistance, making it well-suited for high-speed, high-power applications. The technology is well-suited for audio amplifiers, switching circuits, and digital logic.
The FQD6N50CTM MOSFET is used for amplification in a variety of consumer electronics, including car radios, home audio systems and televisions. It is also used in high-frequency switching applications, such as for telecom amplifiers and switching regulators. In digital logic, the FQD6N50CTM MOSFET is used in logic gates, where it helps to reduce power consumption.
Conclusion
The FQD6N50CTM MOSFET is a versatile device with a wide range of applications. It has a wide range of frequency response and low on-state resistance, making it suitable for high-speed and high-power applications. The technology is well-suited for amplification, switching and digital logic. In this way, it has become an essential component for a variety of applications in consumer electronics and industry.
The specific data is subject to PDF, and the above content is for reference
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