Allicdata Part #: | FQD6N50CTF-ND |
Manufacturer Part#: |
FQD6N50CTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 4.5A DPAK |
More Detail: | N-Channel 500V 4.5A (Tc) 2.5W (Ta), 61W (Tc) Surfa... |
DataSheet: | FQD6N50CTF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 61W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FQD6N50CTF is a N-channel enhancement-mode vertical DMOS FET transistor designed for high-power switching applications. This transistor is designed for both high-voltage switching and linear regulating applications. It has an enhanced voltage rating, capable of operating at higher voltages than conventional FET transistors. It also has a higher tolerance for high temperature and maximum bus voltage stability.
The FQD6N50CTF is widely used in many applications, from consumer electronics to industrial applications. It is widely used in power switching, solar and wind power conversion, power supply design, suspension and linear regulating. This device is particularly useful in the automotive and industrial motor applications, where its low input capacitance and fast switching speed provide an ideal switching solution.
A FQD6N50CTF works on the principle of drain-source voltage control. The source and drain regions of the transistor are separated by a thin insulating layer, typically made of silicon dioxide. The voltage applied to the drain terminal will cause a current to flow between the source and drain regions. This current is controlled by the drain-source voltage and is determined by the channel density of the transistor.
The FQD6N50CTF has a low gate threshold voltage, resulting in low turn on and turn off delays. In addition, it has excellent gate resistors, providing a good level of compensation for any changes to the drain voltage. This enables the device to operate at higher voltages for longer periods of time without losing performance. The FQD6N50CTF has an extremely high gain and low propagation delay.
The FQD6N50CTF also offers an improved gate control, reducing gate voltage levels that would otherwise cause threshold voltage shifting. In addition, the device has the ability to detect malfunctioning gates and reduce the risk of device malfunction by reducing the effective gate voltage.
The FQD6N50CTF is widely used in high-power switching and linear regulating applications, because it offers improved performance and higher power density over other devices. It is also suitable for a variety of applications, such as commercial and consumer electronics, motor control and suspension control.
The FQD6N50CTF is an excellent choice for high-power applications, because it offers improved performance at higher power levels. It is capable of operating at higher voltages and is suitable for a wide range of applications, from consumer electronics to industrial applications.
The specific data is subject to PDF, and the above content is for reference
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