FQD6N60CTM

Series:	QFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	810pF @ 25V
FET Feature:	--
Power Dissipation (Max):	80W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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The FQD6N60CTM is a metal-oxide-semiconductor field-effect transistor (MOSFET) technology that is used in a variety of applications in the electronics industry, such as switching and power conversion.The FQD6N60CTM is a type of insulated gate field-effect transistor (IGFET) which is composed of an N-type semiconductor (the main conducting channel) and a metal gate electrode. It is considered to be an ideal switching device due to its high input impedance and low output impedance. This makes the FQD6N60CTM an efficient choice for high switching speed, low power consumption, and high voltage rating.The working principle of the FQD6N60CTM is based on the flow of electrons through a channel located between the N-type source and drain regions. The source and drain regions can be controlled by the gate voltage, which is applied by an external electric field. When a positive gate voltage is applied relative to the source, the drain-source current (Id) will be known as an inversion charge. Under this condition, the device is said to be “on” and can act as an electronic switch. When no gate voltage is applied, the device is said to be “off” and the drain-source current will cease to flow.The FQD6N60CTM has many applications in the electronics industry. It is commonly used in high-frequency switching in power conversion applications, such as motor controls, voltage regulators, and laptop power adapters. It is also used as a voltage interface in low-voltage power electronics, such as low-voltage power supplies. Additionally, it is often found in flyback transformers, pulse-width modulator (PWM) power supplies, LED lighting, and other power electronics applications.The FQD6N60CTM also has a variety of advantages compared to other MOSFETs. Its low voltage threshold makes it ideal for low-voltage power electronics applications. It also has an extremely high switching speed, making it an efficient choice for high-frequency applications. Furthermore, it has a low on-resistance which enables it to handle high currents and dissipate low amounts of power. Additionally, it has a low capacitance, enabling it to respond quickly to the changes in input signals.In conclusion, the FQD6N60CTM is a type of insulated gate field-effect transistor (IGFET) used in a variety of applications in the electronics industry. It is an efficient choice for high switching speed, low power consumption, and high voltage rating. Moreover, it has many advantages compared to other MOSFETs, such as a low voltage threshold, high switching speed, low on-resistance, and low capacitance. Thus, the FQD6N60CTM is an ideal choice for a wide range of power electronics applications.

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