Allicdata Part #: | FQP50N06FS-ND |
Manufacturer Part#: |
FQP50N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 50A TO-220 |
More Detail: | N-Channel 60V 50A (Tc) 120W (Tc) Through Hole TO-2... |
DataSheet: | FQP50N06 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1540pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The FQP50N06 is a N-Channel enhancement mode power field-effect transistor (FET). It features a low on-resistance and low input capacitance. This device is suitable for use in a wide variety of load switching and amplifier applications. The FQP50N06 is a versatile transistor that is used in a variety of power circuit designs, including: switch mode power supplies, dc-dc converters, motor drivers, lighting control & switching, and other low voltage, low power applications.
The FQP50N06 is an N-channel enhancement mode power MOSFET (metal oxide semiconductor field effect transistor), which has a low on resistance and low input capacitance, suitable for a variety of low voltage, low power applications. This device is available in a TO-220 (transistor outline) package, which is designed for surface mounting.
The FQP50N06 is an enhancement mode device, meaning that the gate voltage is used to control the device. The device is turned on with a negative voltage applied to the gate, increasing the conductivity between the source and the drain. A positive voltage applied to the gate causes the device to be off, creating a high impedance between the source and the drain. The gate voltage is typically controlled with a logic gate or a microcontroller.
The FQP50N06 is considered a linear device because the device acts as a linear resistor between the source and the drain, creating a smooth transition in current as the gate voltage is increased or decreased. This allows for precise control of the amount of current flowing in the device over a wide range of voltages to be achieved, making the device suitable for use in a variety of applications.
The FQP50N06 has a drain current of 50A, at 25°C, and a drain-source voltage of 60V. In addition, it has an on-resistance of 2.7 Ohm, a gate charge of 12nC, and gate-source voltage of +/-20V. The device is rated for continuous drain current of 29A, and a maximum power dissipation of 16W. The FQP50N06 is RoHS compliant and can operate from -55 to 175°C.
The FQP50N06 is a popular device for use in low voltage application as it is relatively low cost, has a low on-resistance, high breakdown voltage, and low input capacitance. Additionally, the device is relatively easy to use as it requires a simple gate voltage to control the device. This makes the FQP50N06 suitable for a variety of low voltage, low power switching applications.
The specific data is subject to PDF, and the above content is for reference
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