Allicdata Part #: | FQP5N90-ND |
Manufacturer Part#: |
FQP5N90 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 5.4A TO-220 |
More Detail: | N-Channel 900V 5.4A (Tc) 158W (Tc) Through Hole TO... |
DataSheet: | FQP5N90 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 158W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 2.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP5N90 is a power MOSFET transistor that has a high drain-to-source breakdown voltage and relatively low on-resistance for its size. In comparison to P-channel MOSFETs, it can provide better channel control. It is also known for its ruggedness and superior thermal resistance, compared to other FETs. Due to its high current rating of up to 95 A and low on-resistance, the FQP5N90 can be used in a variety of applications, including power converters, solar inverters, DC to DC converters, and motor drives.
The FQP5N90 is a type of field effect transistor (FET) that is typically composed of an insulated gate, source and drain regions, and a gate terminal. It is often referred to as a “metal-oxide-semiconductor field-effect transistor” or “MOSFET” for short. FETs are a type of transistor that operates on the principle of controlling current flow using an electric field. The type of FET used in the FQP5N90 consists of a metal gate electrode that is insulated from the semiconductor material by an insulating layer. This insulated gate allows a voltage to be applied between the gate and the source or drain, which then acts as a switch, controlling the current flow between the source and drain regions.
FQP5N90’s most unique feature is its low “on-resistance”. On-resistance is a measure of the resistance of the FET when it is in the “on” or conductive state. Low on-resistance means that the FQP5N90 can provide higher current ratings and better energy efficiency in applications where power consumption is a concern. The FQP5N90 also offers high drain-to-source breakdown voltage and ruggedness, which makes it ideal for certain applications.
The FQP5N90 is widely used in power management systems and motor drives. In power management applications, the FQP5N90 can provide efficient control of current and voltage levels. Its low on-resistance makes it an ideal choice for applications where power consumption is of utmost importance. In motor drives, the FQP5N90 can provide a high current rating, enabling it to work effectively with large motors and other high-power appliances. It is also known for its ruggedness and superior thermal resistance, which is why it is often used in industrial, automotive, and aerospace applications.
The FQP5N90 is a versatile FET and has a variety of applications. Its low on-resistance, high current rating, and ruggedness make it an ideal choice for power management and motor drive applications, while its superior thermal resistance makes it suitable for use in industrial, automotive, and aerospace applications. With its range of features, the FQP5N90 is a useful and reliable device for many different applications.
The specific data is subject to PDF, and the above content is for reference
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