Allicdata Part #: | FQP5N80-ND |
Manufacturer Part#: |
FQP5N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 800V 4.8A TO-220 |
More Detail: | N-Channel 800V 4.8A (Tc) 140W (Tc) Through Hole TO... |
DataSheet: | FQP5N80 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 140W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1250pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.6 Ohm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.8A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.The FQP5N80 is an N-Channel MOSFET transistor that has 200V drain to source voltage with an RDS (on) of 0.65Ohm. It has an impressive current capability of 33A. This high quality transistor is highly efficient and suitable for fast switching applications.
Application Field
The FQP5N80 is suitable for a wide range of applications. It is particularly commonly used in high power supplies, and is often used in switching power amplifiers in order to control large currents. Its low resistance makes it suitable for hot switching, meaning that it can handle high voltages with minimal damage and loss of efficiency. The FQP5N80 is also exceptionally suitable for motor control applications, as it can switch large currents quickly and efficiently.
Working Principle
The FQP5N80 is an N-Channel MOSFET transistor. This type of transistor is a type of Field-Effect Transistor that is created by creating a "channel" between Source and Drain terminals. In other words, when a gate voltage is applied, the channel opens, allowing electric current to flow freely between the source and drain.
The FQP5N80 features a low on-resistance which helps it maintain high efficiency. This means that the FQP5N80 can handle larger current levels with less heat loss. The FQP5N80 also has superior switch speed, allowing it to switch rapidly with minimal energy loss.
The FQP5N80 is also designed to maximize thermal efficiency. Its low thermal resistance helps minimize heat build-up and maximizes efficiency.
Conclusion
In conclusion, the FQP5N80 is a high quality N-Channel MOSFET transistor. It is highly suitable for switching power amplifiers, motor control applications and high current circuits. Its superior switch speed and low resistance make it an incredibly efficient and reliable transistor.
The specific data is subject to PDF, and the above content is for reference
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