Allicdata Part #: | FQP58N08-ND |
Manufacturer Part#: |
FQP58N08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 80V 57.5A TO-220 |
More Detail: | N-Channel 80V 57.5A (Tc) 146W (Tc) Through Hole TO... |
DataSheet: | FQP58N08 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 146W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 28.75A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 57.5A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP58N08 field-effect transistor (FET) is a high-voltage, high-speed device that is commonly used as switches in power electronic circuits. It is a metal oxide semiconductor field effect transistor (MOSFET), which is specifically designed for switched mode power supply (SMPS). This device is available in both single-ended and double-ended versions.
The FQP58N08 is a single N-channel MOSFET, which means that it can only conduct charge in the forward direction (from source to drain) when the gate voltage is higher than the source voltage. The device has a breakdown voltage rating of 600V and a drain-source voltage rating of 50v, which makes it suitable for use in high-voltage circuits.
The FQP58N08 is commonly used as a power switch in SMPS circuits, as it can handle high voltages and switch ON/OFF quickly, thus allowing for efficient power conversions. For example, it can be used as a switching element in DC-DC converters and AC-DC converters. In these applications, a pulse-width-modulated (PWM) signal is sent to the Gate of the device, causing it to turn ON/OFF rapidly, thus allowing the necessary power conversions to take place.
The working principle of this device is fairly simple. When a voltage is applied to the Gate terminal of the FQP58N08, the channel between source and drain starts to conduct, thus allowing current to flow from source to drain. This voltage is then modulated to control the amount of current that flows through the channel. As the Gate voltage is increased, the channel is widened, allowing more current to flow. Conversely, when the Gate voltage is reduced, the channel is narrowed, reducing the flow of current.
The FQP58N08 is an exceptionally rugged and reliable device, with a maximum operating temperature rating of 175°C and a high dielectric withstand rating, making it ideal for use in demanding environments. Additionally, its low input capacitance provides fast switching speeds, allowing it to be used in high-speed applications. Its high voltage and power ratings also make it ideal for a wide range of power conversion and switching applications.
In conclusion, the FQP58N08 is a reliable, robust and fast-switching MOSFET device that is specifically designed and optimized for use in power electronic circuits, such as SMPS power converters. It can handle high voltages and rapidly switch ON/OFF, making it perfect for these demanding applications.
The specific data is subject to PDF, and the above content is for reference
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