| Allicdata Part #: | FQP55N06-ND |
| Manufacturer Part#: |
FQP55N06 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 60V 55A TO-220 |
| More Detail: | N-Channel 60V 55A (Tc) 133W (Tc) Through Hole TO-2... |
| DataSheet: |  FQP55N06 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 133W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1690pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 27.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQP55N06 is a well-known field-effect transistor (FET) used in many applications. It is a single N-channel device, so it\'s capable of both low-side and high-side switching. In this article, we will discuss the FQP55N06\'s application fields and working principles.
The FQP55N06 Application Field
The FQP55N06 is a power-efficient transistor with a high-current capacity and low on-resistance. It\'s often used in applications where power conservation is a priority, such as switching power supplies, DC/DC converters, and motor controllers. It can also be used for linear applications such as amplifiers, audio circuits, and voltage regulators. Because of its low on-resistance, it can also be used in high-precision current sensing.
The FQP55N06 Working Principle
The FQP55N06 is a depletion mode device, meaning that without any gate voltage it\'s in the OFF state. This means that it has to be turned on before it can conduct. When a voltage is applied to the gate, then it turns the transistor on, allowing current to flow between the source and the drain. This means that when a voltage is applied to the gate, it becomes the control element for the on/off state of the FQP55N06.
The FQP55N06 is a highly efficient device with a high-current capability, low on-resistance, and low gate-drain feedback capacitance. It\'s also a low-cost device and it has excellent noise immunity and high-frequency operation compared to other N-channel MOSFETs. It\'s also capable of very fast switching times, making it ideal for both pulse-width modulation (PWM) and frequency-modulated (FM) applications.
Conclusion
The FQP55N06 is a single-N channel transistor used in many applications. It\'s used in applications where power conservation is a priority, as well as linear applications such as amplifiers and audio circuits. It\'s also a highly efficient device with a high-current capacity, low gate-drain feedback capacitance, and fast switching times. It has excellent noise immunity, making it an ideal choice for PWM and FM applications.
The specific data is subject to PDF, and the above content is for reference
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