Allicdata Part #: | FQP5N50C-ND |
Manufacturer Part#: |
FQP5N50C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5A TO-220 |
More Detail: | N-Channel 500V 5A (Tc) 73W (Tc) Through Hole TO-22... |
DataSheet: | FQP5N50C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 73W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 625pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP5N50C is a N-channel MOSFET, which is a type of field-effect transistor (FET) that acts as a normally-off switch when a voltage is applied to the gate. It is used in a wide variety of applications, including power supplies, motor drivers, portable device chargers, automotive electronics, LED lighting, robotics, audio amplifiers and much more.
A MOSFET is an electronic device consisting of three terminals, with a single-channel or multi-channel design depending on the model. The terminals are the gate, source and drain. The gate voltage applied determines the conduction of current through the device, with a voltage applied to the gate causing the device to conduct and no voltage allowing current to pass. The FQP5N50C is designed to work with a voltage of up to 500 Volts, with an RDS(on) value of 0.59 ohms when operating at a gate voltage of 10 volts.
The FQP5N50C also has a unique threshold voltage, or Vth, which is the voltage at which the transistor turns on and off. This threshold voltage is typically between 4 and 5 volts. Above this threshold, the transistor will be in a conducting state and the drain current will be at its maximum value. Below this threshold, the transistor will be in a cutoff state and the drain current will be at its minimum value.
The FQP5N50C is designed for switching and power management applications, as this device is designed to operate at high frequencies and with low on-resistance values. This makes it suitable for high-frequency switching and high-efficiency power management applications such as motor control, office and networking equipment, video displays and portable equipment. The device is also designed to reduce power losses and increase power efficiency when used in these applications. Its high frequency capability and low on-resistance combined with its low noise make it the ideal choice for a wide variety of applications.
In summary, the FQP5N50C is a high-performance Power MOSFET that is suitable for a wide variety of applications. It has a unique threshold voltage, a high switching frequency, and low on-resistance values, making it an ideal choice for power management applications where power efficiency is important. The device is also suited for high-frequency switching and signal processing applications where reducing power losses is desired.
The specific data is subject to PDF, and the above content is for reference
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