
Allicdata Part #: | FQP50N06L-ND |
Manufacturer Part#: |
FQP50N06L |
Price: | $ 1.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 52.4A TO-220 |
More Detail: | N-Channel 60V 52.4A (Tc) 121W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 2789 |
1 +: | $ 1.49000 |
10 +: | $ 1.44530 |
100 +: | $ 1.41550 |
1000 +: | $ 1.38570 |
10000 +: | $ 1.34100 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 121W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1630pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 21 mOhm @ 26.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 52.4A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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A FQP50N06L is a N-channel enhancement mode MOSFET which is a type of insulated-gate field-effect transistor (IGFET). The power MOSFET is designed to switch between a high electrical resistance (OFF state) and a low electrical resistance (ON state) when a high-voltage electric current is applied to its gate terminal. FQP50N06L is an ideal choice for applications needing an easy to use, reliable, and cost-effective MOSFET.
The FQP50N06L MOSFET belongs to the FQP50 family, which is composed of four general purpose power MOSFETs. It has a breakdown voltage of 60 volts and a drain-source current of 50 A. Its maximum power dissipation is 55 watts, and it has a RDS(ON) of 18 mΩ at a gate-source voltage of 10V. FQP50N06L also has a thermal resistance of 175 K/W.
FQP50N06L has many applications in consumer, audio, and telecom electronics. It is commonly used for switching, amplifier circuits, and other high current applications demanding low on-resistance. One of the examples is an AC-DC switching power supply, which is a common appliance in consumer products. It can also be used in motor drivers, audio processing, and other applications where power efficiency is necessary. FQP50N06L can also be used in automotive applications due to its low on-resistance and high current capabilities.
The working principle of FQP50N06L is quite simple. When a high-voltage electric current is applied to the gate terminal, it activates the N-type MOSFET, which means the resistance of the MOSFET is reduced from its High OFF-state to its Low ON-state. This allows the current flow from the source to the drain in a controlled manner, thus creating an ON-state for the MOSFET. Conversely, when the current flow is stopped, the MOSFET returns to its OFF-state.
Overall, FQP50N06L is a cost-effective and efficient MOSFET ideal for many power circuits and applications. It is an easy and reliable choice for a wide array of applications, from consumer, audio, and telecom electronics, to automotive electronics and AC-DC power supplies. Its simple working principle of high-voltage electric current activating the N-type MOSFET, switching it from its OFF-state to its ON-state, makes it an ideal choice for many applications demanding reliable and efficient switching and power efficiency.
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