FQP5N20L

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FQP5N20L is a type of n-channel enhancement mode MOSFET developed by Fairchild Semiconductor Corporation. It is a widely used and versatile transistor that is ideal for applications in power switches, motor drives, and high-side current control circuits. In this article, we\'ll discuss the FQP5N20L\'s application field and its working principle.

Application Field

The FQP5N20L can be used in a wide range of applications. It is a popular choice for controlling the power switch of an AC/DC power supply, including power supply designs for computer and other electronic devices. It can also be used in high-side current control circuits, such as those used in motor drives and power supplies. This type of transistor is also convenient for use in circuit designs involving high-voltage and high-current applications.

Another popular application for the FQP5N20L is in high-speed switching operations. Due to its fast switching characteristics and low on-state resistance, it can be used in applications that require fast switching, such as pulse-width modulation (PWM) or pulse-frequency modulation (PFM) control circuits. It can also be used in rectifier circuits, such as full-wave and bridge rectifiers, and chopper circuits.

Finally, the FQP5N20L can be used in audio amplifiers and other audio processing circuits that require low distortion levels. By using this transistor, engineers can reduce the amount of feedback and distortion in the output signal.

Working Principle

The FQP5N20L is an enhancement-mode MOSFET that is designed to operate in the saturation region; in this region, the MOSFET acts as a linear variable resistor. When the gate voltage of the FQP5N20L is increased, the drain current of the transistor is also increased. The relationship between the gate voltage and the drain current is also known as the transfer characteristics of the MOSFET. The transfer characteristics of the FQP5N20L can be represented by an equation, which is commonly referred to as the “transfer equation”.

The transfer equation of FQP5N20L is derived from the equation of a line y = mx + b, where m is the slope of the line (or the inverse of the resistance) and b is the intercept of the line (or the threshold voltage). In the transfer equation, m is referred to as the gain of the MOSFET and b is referred to as the threshold voltage. The equation is as follows:

ID = K(VGS - VT)²,

where ID is the drain current, VGS is the gate-source voltage, VT is the threshold voltage, and K is the gain of the MOSFET.

The transfer characteristics of the FQP5N20L can be represented by a graph, as shown in the figure below. As shown in the graph, the drain current increases with an increase in the gate-source voltage. The slope of the curve is the gain of the FQP5N20L, while the intercept is the threshold voltage. The gain of the FQP5N20L can be adjusted by changing the channel length, channel width, and channel doping.

The FQP5N20L is a highly efficient transistor that is ideal for a wide range of applications. Its wide range of applications and fast switching characteristics make it an ideal choice for a variety of power conversion and control applications. As a result, it is a popular choice among engineers and other professionals in the field of power electronics.

The specific data is subject to PDF, and the above content is for reference