FQP90N08

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The FQP90N08 is a 900V N-channel power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). MOSFETs are used in many applications because of their high-speed switching capability and low on-state resistance. The FQP90N08 is specifically designed for power switching applications where performance and reliability are of particular importance. This article will discuss in detail the application fields, construction, working principles, and typical characteristics of the FQP90N08.

Application Field

The FQP90N08 is designed for use in high-power switching applications in automotive, industrial, and consumer applications. It has a high dv/dt rating, making it suitable for use in fast-switching applications. It has a high current-handling capacity of up to 150A, making it suitable for use in power converters and motor drives. Its wide drain-source breakdown voltage range of up to 200V makes it suitable for use in DC-DC converter designs. It is also suitable for use in PoE (Power over Ethernet) applications.

Construction

The FQP90N08 is a three-terminal silicon MOSFET composed of N-type silicon with separate source, gate, and drain regions. The N-type silicon is known as an intrinsic layer which provides a conductive channel between the source and drain. An ion-implanted isolation layer is placed in between the intrinsic layer and the gate region for insulation. The gate region is then insulated from the intrinsic layer using a gate oxide layer. This gate oxide layer consists of a thin film of silicon dioxide which is formed by oxygen plasma. The gate is then connected to the gate terminal and current can flow from the gate to the intrinsic layer via the gate oxide layer.

Working Principle

The FQP90N08 works on the principle of the MOSFET field effect. When a voltage is applied to the gate, it generates an electric field which modulates the current flow between the source and drain terminals. This modulation is known as the \'gate effect\'. At low gate voltages, the electric field is too weak to create a conductive channel between the source and the drain and no current flows. At higher gate voltages, the electric field becomes strong enough to create a conductive channel, allowing current to flow from source to drain.

The resistance of this conductive channel is controlled by the voltage applied to the gate. This is known as the \'channel resistance\'. As the gate voltage is increased, the channel resistance decreases, resulting in an increase in the drain-source current. At a certain gate voltage (known as the \'threshold voltage\'), the channel resistance drops to its lowest possible value and the drain-source current becomes maximum.

Typical Characteristics

The FQP90N08 has a maximum drain-source voltage of 900V, a maximum drain current of 150A, a drain-source on-resistance of 0.070 Ω, a threshold voltage of 4.5V and an input capacitance of 590pF. The FQP90N08 also has a fast switching capability, with a turn-on/off time of 150ns/120ns. It has an integrated ESD protection diode, and operates in a temperature range of -55°C to 175°C.

Conclusion

The FQP90N08 is a 900V N-channel power MOSFET designed for use in high-power switching applications. It has a high dv/dt rating and drain-current carrying capacity of up to 150A, and an on-state resistance of 0.070 Ω. It also has an integrated ESD protection diode and operates in a temperature range of -55°C to 175°C. This makes it suitable for use in a wide range of applications from automotive, industrial, and consumer applications, to fast-switching and PoE applications.

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