| Allicdata Part #: | FQP9N15-ND |
| Manufacturer Part#: |
FQP9N15 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 150V 9A TO-220 |
| More Detail: | N-Channel 150V 9A (Tc) 75W (Tc) Through Hole TO-22... |
| DataSheet: |  FQP9N15 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 75W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 410pF @ 25V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The FQP9N15 is a high-performance N-channel enhancement mode MOSFET, with a built-in Drain-Source diode. It is optimised for low power, low on-state resistance, and high switching speed. With enhanced electrical characteristics and a wide range of voltage ratings and package options, FQP9N15 is well-suited to a variety of applications.
The FQP9N15 features a well-rounded application field that includes a range of switching, linear, and processor applications. It has a low gate charge, making it suitable for high speed switching applications such as for DC-DC converters, DC-AC inverters, and other switching power supplies. It also provides excellent low-end cut-off characteristics, making it suitable for linear power regulation applications.
The FQP9N15 has a versatile working principle. A low gate threshold voltage allows it to switch on quickly and with low power. Its high-temperature stability ensures that it can operate reliably over a wide range of temperatures. Its improved on-state resistance makes sure that it is not only efficient but also cost-effective. Additionally, its optimised package provides excellent thermal and electrical performance.
The FQP9N15 is typically used in power management circuits, high-side switching applications, and similar areas as outlined above. For example, it is used as a power switch in various motor control applications, controlling the direction and speed of motor operation. Its high-speed switching characteristics make it suitable for high-frequency motor control, and its low on-state resistance ensures high efficiency.
The FQP9N15 is also suitable for various processor applications. Its low gate charge and low threshold voltage make it an ideal choice for high-speed logic circuits, making sure that data is delivered with minimal latency and maximum reliability. In addition, its low resistance makes it ideal for high speed processors and for increasing power efficiency.
In conclusion, the FQP9N15 is a versatile and reliable MOSFET for a variety of power management and processor applications. Its low gate charge, low resistance, and low threshold voltage make it an ideal choice for highly efficient, reliable, and cost-effective power control and processing solutions.
The specific data is subject to PDF, and the above content is for reference
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