FQP9N08

Series:	QFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	210 mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7.7nC @ 10V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	250pF @ 25V
FET Feature:	--
Power Dissipation (Max):	40W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3

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<p>The FQP9N08 is a N-channel enhancement mode Field Effect Transistor (FET) with a low threshold voltage and low gate-source capacitance. It is specifically designed to operate in high frequency, low power amplifier applications such as radio and television (RF) amplifiers and modulators, as well as low voltage switching applications. The FQP9N08 is characterized for proper operation to +150°C junction temperature, making it suitable for a variety of applications in volatile environments.</p><h3>FQP9N08 Application Field</h3><p>The FQP9N08 is designed for use in medium and high power amplification, switching and RF applications such as; RF power amplifiers, high voltage (15V) switch circuits, DC/DC converter applications, light dimmers, power supplies, and interface circuits. The FQP9N08 is also an excellent choice for applications where both high frequency operation and low power consumption is required, such as RF and video amplifiers.</p><h3>FQP9N08 Working Principle</h3><p>The FQP9N08 is a three-terminal device with sources, gates and drains. In an N-channel device, the source is the negative terminal and the gate is the positive terminal. The drain terminal is the main current carrying terminal. The structure of the FQP9N08 operates in the enhancement mode (mode of operation where the channel must be induced to become conducting). The FQP9N08 has a distinct threshold voltage, which is the voltage required to turn the device on. When the voltage applied to the gate is at or above the threshold voltage, current will flow through the device.</p><p>In the enhancement mode of operation, the FQP9N08 has a very low Gate-Source capacitance. This low Gate-Source capacitance gives the FQP9N08 excellent high frequency performance, allowing it to be used in high frequency switching circuits, amplifier circuits, and other high speed applications. In addition, the FQP9N08 has a low gate drive voltage, which makes it ideal for low voltage applications.</p><p>The FQP9N08 is also characterized for temperature operation up to +150°C Junction Temperature, making it ideal for use in high temperature environments such as automobile and industrial applications.Moreover, the FQP9N08 is available in a variety of different packages so it can be used in applications with limited space.</p><p>In conclusion, the FQP9N08 is especially suitable for applications in high frequency, low power amplifier circuits, such as radio and television (RF) amplifiers and modulators, as well as low voltage switching applications. It has excellent high frequency performance due to its low Gate-Source capacitance, and its low gate drive voltage makes it ideal for low voltage applications. Its temperature range of up to +150°C Junction Temperature makes it suitable for a variety of applications in volatile environments, and the availability of different packages ensures that it is suitable for any application, no matter the size of the space it needs to fit into.</p>

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