FQP9N90C

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The FQP9N90C is a high voltage power MOSFET transistor with excellent switching performance. It is a voltage-controlled field effect transistor with an enhancement mode enhancement type N-channel MOSFET as its active region. This type of transistor has become popular for use in a wide range of digital and power switches, inverters and amplifiers.

The FQP9N90C has a maximum drain-source voltage of 900V, a drain source current of 9A (continuous) and a maximum power dissipation of 289W. It also has a typical gate-source voltage of 4V and a maximum drain-source on-state resistance of 0.026Ohm. This device is designed for a wide range of applications, including power switches, audio power amplifiers, and high-frequency switching circuits.

The FQP9N90C is manufactured with a shorted gate-source structure that helps to reduce gate-source capacitance. This device is capable of fast switching speeds and improved switching performance over traditional MOSFETs. The FQP9N90C can also handle higher drain currents than the standard MOSFETs, and has less gate-leakage current than other MOSFETs.

The FQP9N90C has many features that make it suitable for a variety of applications. It has a low on-state resistance and high voltage resistance, which make it suitable for use in power switches. It also has very low gate-source leakage current, which makes it ideal for transistor switches. Additionally, it is capable of very fast switching speeds and is relatively immune to second breakdown.

The working principle of the FQP9N90C is based on the principle of a voltage-controlled field effect transistor (FET). A physical representation of the FET is a long channel with two source and drain regions that are separated by an insulating layer known as a gate oxide. A voltage applied to the gate control terminal can modulate the current flow from source to drain. When the gate voltage has a positive voltage, the drain current increases; when the gate voltage has a negative voltage, the drain current decreases.

The FQP9N90C has many advantages over other types of transistors. Its shorted gate-source structure reduces gate-source capacitance and provides improved switching performance. It has a low on-state resistance and improved switching speed and can handle higher drain currents than the standard MOSFET. It is also significantly less susceptible to second breakdown when compared to other MOSFETs.

The FQP9N90C is widely used in a range of applications, including high-frequency switching circuits, digital logic circuits, audio power amplifiers, power switches, inverters and amplifiers. Its high current, low on-state resistance, fast switching speed and robust second breakdown immunity make it a great choice for these types of applications.

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