FQP90N10V2 Allicdata Electronics
Allicdata Part #:

FQP90N10V2-ND

Manufacturer Part#:

FQP90N10V2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 90A TO-220
More Detail: N-Channel 100V 90A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: FQP90N10V2 datasheetFQP90N10V2 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6150pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 191nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 45A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQP90N10V2 is a field-effect transistor (FET). This type of transistor is a three-terminal device in which current is regulated using a voltage applied to the electrical gate. FETs can be used either as voltage-controlled resistors or as handy switches for carrying current from one node to another. In the case of the FQP90N10V2, it is a single N-channel type, which means it has a single voltage control grid, as opposed to having multiple grids, as with the dual gate type FET.

The operating principle of the FQP90N10V2 is fairly straightforward. When the gate voltage is zero, the drain-source channel is non-conductive, meaning that no current can flow through it. When the gate voltage is positive, the drain-source channel is conductive, allowing current to flow. The FQP90N10V2 has a maximum drain-source breakdown voltage of 10 volts, which means that the voltage difference between the drain and source terminals cannot exceed 10 volts.

The FQP90N10V2 is capable of carrying large currents, for instance up to approximately 8 A for continuous use. It has a ‘maximum’ drain-source on-resistance of 90 mΩ, which means that the impedance of the drain-source path is lower, when current is flowing, than with other types of similar FETs.

Applications for the FQP90N10V2 FET include use as power switch for motor control, for example for switching large currents in motor controllers. The FQP90N10V2 is also commonly used in DC-DC converters, as it is able to stably switch between different voltages. Furthermore, the FQP90N10V2 is often used as a current-limiting switch in applications involving large currents.

In conclusion, the FQP90N10V2 is a single N-channel type FET with a maximum drain-source breakdown voltage of 10 volts. Its operating principle is such that when the gate voltage is positive, the drain-source channel is conductive and current can flow. Applications include power switch for motor control, as a DC-DC converter and as a current-limiting switch.

The specific data is subject to PDF, and the above content is for reference

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