FQP9N50 Allicdata Electronics
Allicdata Part #:

FQP9N50-ND

Manufacturer Part#:

FQP9N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 9A TO-220
More Detail: N-Channel 500V 9A (Tc) 147W (Tc) Through Hole TO-2...
DataSheet: FQP9N50 datasheetFQP9N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 147W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 730 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQP9N50 is a high performance power metal oxide semiconductor field-effect transistor (MOSFET) designed primarily for use in switching applications. It is commonly used in voltage-sensitive circuits, where its fast switch over time is essential. The device is particularly useful in applications requiring high levels of power but low levels of energy, making it an excellent choice for power management applications. The device is available in a wide range of packages, making it easy to integrate into a variety of designs.

The FQP9N50 is a N-channel enhancement mode device. It is a depletion mode device with an efficient gate control region. The device has a low drain-source on-state resistance, low gate charge, low gate resistance and high breakdown voltage. This makes it ideal for applications with high speeds, low operating costs and low losses. The device also has high input impedance, making it suitable for use in high impedance circuits.

In order for the FQP9N50 to work properly, it needs to be connected to a gate drive circuit. This circuit is used to control the voltage across the drain and source, as well as the direction of current flow. The gate drive circuit controls the device based on the input voltage and the current needs of the circuit. When the input voltage is applied to the gate drive circuit, the FQP9N50 will be turned on. When the voltage is removed, the device will be turned off.

The FQP9N50 is often used in power management applications such as switch mode power supplies, buck converters and CLOUT regulators. It is also used in other power management applications such as buzzers, dimmers and LED drivers. Additionally, the device is also suitable for use in switch mode LED drivers and LED displays.

The FQP9N50 is a great choice for many applications because of its low gate charge, fast switch over time and low on-state resistance. Its small form factor and ability to be easily integrated into a design make it a desirable alternative to other power management devices. With its excellent performance and low power consumption, the FQP9N50 is an excellent choice for power management applications requiring fast switching and low operational costs.

The specific data is subject to PDF, and the above content is for reference

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