Allicdata Part #: | FQP9N25C-ND |
Manufacturer Part#: |
FQP9N25C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 8.8A TO-220 |
More Detail: | N-Channel 250V 8.8A (Tc) 74W (Tc) Through Hole TO-... |
DataSheet: | FQP9N25C Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 74W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 710pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 4.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.8A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQP9N25C is a power field effect transistor (FET) designed for high-current switching applications. It can handle high peak Pulse currents and provides a very low on-state resistance (RDS on). It offers gate-source and gate-drain diode protection and is available in the TO-220 package. The FQP9N25C offers superior power handling capabilities and a wide range of advantages that make it an ideal choice for many power switching applications.
The FQP9N25C belongs to a type of FETs called MOSFETs. MOSFETs (metal–oxide–semiconductor field-effect transistors) are the most versatile type of transistors and can handle large currents with small gate voltages. They are commonly used in electronic circuits to do the job of an amplifier or switch, depending on the application.
The FQP9N25C is a single-channel device that can be used as a switch or to amplify the signal at the gate. It is powered by a voltage source and the voltage drop across the component is a function of the current that is passing through it. When the gate voltage is applied to the transistor, it turns on and a current can flow from the drain to the source terminals. In addition, it can also regulate the current that passes between these two terminals by modulating the gate voltage.
The FQP9N25C is typically used in high-current switching applications such as motor control, power supply regulation, and lamp control. It offers a great amount of power handling capability and can withstand high peak pulse currents. This makes the FQP9N25C a great choice for applications with high inrush currents such as inductive loads like motors or transformers. Additionally, its low on-state resistance (RDS on) reduces power dissipation, making it a good choice for power supply applications where low power dissipation is desired.
The FQP9N25C is also highly reliable and durable, making it suitable for applications where reliability is a must. It can operate at temperatures up to 175°C and offers excellent immunity against radio frequency interference and high noise levels. As a result, it is ideally suited for demanding applications such as automotive, industrial, and communications.
In conclusion, the FQP9N25C is an excellent choice for high-current switching applications. It offers a very low on-state resistance (RDS on), making it ideal for applications that require low power dissipation. It is also highly reliable and durable, able to withstand high peak pulse currents and operate at high temperatures. As a result, the FQP9N25C is suitable for applications such as motor control, power supply regulation, and lamp control.
The specific data is subject to PDF, and the above content is for reference
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