FQP9P25 Allicdata Electronics
Allicdata Part #:

FQP9P25FS-ND

Manufacturer Part#:

FQP9P25

Price: $ 1.23
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 250V 9.4A TO-220
More Detail: P-Channel 250V 9.4A (Tc) 120W (Tc) Through Hole TO...
DataSheet: FQP9P25 datasheetFQP9P25 Datasheet/PDF
Quantity: 931
1 +: $ 1.23000
10 +: $ 1.19310
100 +: $ 1.16850
1000 +: $ 1.14390
10000 +: $ 1.10700
Stock 931Can Ship Immediately
$ 1.23
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 620 mOhm @ 4.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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The FQP9P25 is a type of field effect transistor (FET) also known as an insulated-gate transistor. Specifically, it is a single - source mosfet (metal-oxide-semiconductor field effect transistor) that is widely used in power applications. It is a single-pole device with a quadratic current-limiting feature, allowing it to switch power efficiently. It is also known for its low on-resistance, fast switching speed, and excellent linearity.

Working Principle

The FQP9P25 works on the principle of the transistor effect, where current flows through the device when it is activated by a small electric field. The insulating layer between the gate and the source of the FET isolates the gate from the source and effectively keeps both the gate and source at a controlled potential. When a voltage is applied to the gate, mobile electrons in the source region are attracted towards the gate by the electric field. This creates an additional layer of mobile electrons in between the gate and the source, which is known as inversion layer. This allows the current from source to drain to flow more easily, thus switching the device on.

The FQP9P25 is controlled by varying the voltage applied to the gate. Application of higher voltages increases the electric field strength and creates a larger inversion layer, which further increases the device’s current flow. However, when the voltage goes above a certain threshold, called the drain current limit, the current can no longer be increased and the device is effectively turned off.

Application Field

The FQP9P25 is used in a variety of applications due to its fast switching speeds, low on-resistance, and excellent linearity. It is widely used in applications such as switching power supplies and power sequencers. It can be used as an on/off switch, as well as to control the magnitude of currents to various electronic components. It is also used for linear operation of power amplifiers and voltage regulators, as well as for gaming applications.

The FQP9P25 is also widely used in automotive and military applications, such as motor and lighting controllers, power distribution boxes, and power switching systems. It is also used for joystick controllers, as well as for various analog control applications. It is also used for various control and switching systems, such as motion control, vibration feedback, and lighting control systems.

The FQP9P25 is commonly used in high-frequency applications, such as RF (radio frequency) and microwave circuits, due to its excellent linearity and low on-resistance. It can also be used in low-frequency applications, such as digital and mixed-signal circuits. Overall, the FQP9P25 is a versatile device and is used in a variety of applications due to its fast switching speeds and low on-resistance.

The specific data is subject to PDF, and the above content is for reference

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