IPS60R3K4CEAKMA1

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IPS60R3K4CEAKMA1 Application Field and Working Principle

The IPS60R3K4CEAKMA1 is a power FET (Field Effect Transistor) which is used in many different applications. It is a single N-channel, 4-pin MOSFET (Metal Oxide Semiconductor Field Effect Transistor). These transistors are primarily used in high current and/or high voltage applications as they are capable of delivering large amounts of current with low on resistance.

MOSFET transistors are voltage-controlled transistors. This means that the conducting channel between the source and the drain can be controlled or "switched" by the voltage applied between the gate and source. As the voltage increases, the current flow through the drain increases until it reaches the limit of the maximum drain current.

The IPS60R3K4CEAKMA1 transistor is suitable for a variety of applications such as motor control, high frequency circuits, power supplies, audio amplifiers, switching power supplies, and more. It is specifically designed for efficiency and can handle currents up to 3.4A with its low on resistance of 0.39 ohms. It has a low gate charge and fast switching speed, which makes it suitable for high frequency applications. Additionally, it has a maximum drain-source voltage rating of 600V, a high threshold voltage of 3V, and an operating temperature range of -55 to 175 °C.

The IPS60R3K4CEAKMA1 has an enhancement mode of operation which means that the depletion region between the source and drain increases with the increasing of the voltage applied to the gate. In this way, the conducting channel between the source and the drain is increased, allowing more current to flow through it. When the voltage is removed from the gate, the depletion region is gradually reduced, and the current flow through the source and drain is reduced.

The IPS60R3K4CEAKMA1 is highly reliable and can handle large amounts of current with low on resistance. It is capable of delivering high efficiency and performance at a wide range of temperatures. Its fast switching speed, low gate charge, and high voltage and current ratings make it suitable for a variety of applications.

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