Allicdata Part #: | IPS65R600E6AKMA1-ND |
Manufacturer Part#: |
IPS65R600E6AKMA1 |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V TO-251-3 |
More Detail: | N-Channel 650V 7.3A (Tc) 63W (Tc) Through Hole PG-... |
DataSheet: | IPS65R600E6AKMA1 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.48241 |
Vgs(th) (Max) @ Id: | 3.5V @ 210µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 63W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | CoolMOS™ E6 |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The IPS65R600E6AKMA1 is a transistor specialty component that belongs to the family of field-effect transistors, commonly known as MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors). As the name implies, the IPS65R600E6AKMA1 is a single transistor, meaning it consists of one gate, source, and drain. It has a wide variety of applications, from power mosfets used in motor control to switching devices used in AC to DC converters.
MOSFETs are commonly used in switching as they offer higher current carrying capacities with minimal loss. They are also faster than almost any other type of transistor, allowing them to turn on and off within nanoseconds. They are ideal for providing power to digital components, such as microprocessors, as they can provide a large amount of current without any time lag.
The basic working principle behind MOSFETs is known as the "Depletion Mode." This refers to the fact that when a voltage is applied to the transistor gate, a depletion layer is created between the gate electrode and the underlying semiconductor material. This results in a barrier preventing current from flowing through the transistor. To turn the MOSFET "On," a voltage is applied to the gate, removing the depletion layer and allowing current to flow. Conversely, to turn the MOSFET "Off" a voltage is removed from the gate and the depletion layer is recreated.
The IPS65R600E6AKMA1 can be used in many different applications, but the most common use is as a power mosfet for motor control and switching. In these applications, the mosfet is often used to switch high-power signals, allowing the user to control large amounts of current and/or voltage. It can also be used to switch signals (on/off) within digital circuits, such as microprocessors, with extreme speed and precision. Furthermore, its ability to carry high currents with minimal loss makes it ideal for some AC to DC converters.
In conclusion, the IPS65R600E6AKMA1 is a single component MOSFET transistor. Its Depletion Mode operation makes it ideal for high-current, high-frequency applications including motor control, switching, and AC to DC converters. Its ability to switch signals with extreme speed and precision makes it particularly well suited for use in digital circuits.
The specific data is subject to PDF, and the above content is for reference
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