IPS65R650CEAKMA1

Vgs(th) (Max) @ Id:	3.5V @ 210µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 150°C (TJ)
Power Dissipation (Max):	86W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	440pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	650 mOhm @ 2.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10.1A (Tc)
Drain to Source Voltage (Vdss):	700V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IPS65R650CEAKMA1 is a type of transistor, specifically a Field Effect Transistor (FET) specifically a Metal Oxide Semiconductor FET (MOSFET) specifically a single. It is designed to switch voltages between the Gate and Source terminals. The FETs have an incredibly wide range of applications and can be used for automotive, consumer electronics, medical, computing, and telecommunications. The IPS65R650CEAKMA1 is an N-channel FET, meaning that is has a positive drain to source voltage, a negative gate to source voltage, and a negative gate to drain voltage. It has a voltage range of -20V to -100V, and a current rating of 25A. This makes it suitable for use with many different types of circuits and devices. The working principle of the IPS65R650CEAKMA1 is similar to that of other FETs. When a positive voltage is applied to the Gate terminal, a current flows from the Source to the Drain, turning the FET “on”, and allowing the voltage to flow from the Gate to the Source. This is referred to as an Enhancement Mode FET, as the voltage must be increased above the threshold level for the FET to turn “on”. Conversely, when a negative voltage is applied to the Gate terminal, a current flows from Drain to Source, turning the FET “off”, and blocking the voltage from flowing from the Gate to the Source. This is referred to as a Depletion Mode FET, as the voltage must be decreased below the threshold level for the FET to turn “off”. The IPS65R650CEAKMA1 is a very versatile FET and has many applications. It is commonly used in automotive or home CD receivers, stereo amplifiers, power management circuits, and motor control circuits; however it can be used in almost any application where the voltage must be turned on or off.The FET can also be used to provide isolation between the Gate and Source terminals. This is especially useful in systems where multiple FETs must be located in close proximity to each other, as the isolation provided by the FET helps reduce the risk of cross-contamination between circuits. The IPS65R650CEAKMA1 is also suitable for use in RF circuits, as the drain to source capacitance of the FET is low enough to reduce the risk of signal degradation. This makes it well suited for use in high-frequency applications such as radio transmitters and receivers. Finally, the IPS65R650CEAKMA1 can also be used in power circuits that require a large amount of control. By increasing the Gate voltage, the current through the FET can be precisely controlled. This can be used to control the level of power output in an inverter or other power supply. In conclusion, the IPS65R650CEAKMA1 is a versatile Field Effect Transistor that can be used in a wide range of applications. It has very low drain to source capacitance, which makes it well suited for use in both high-frequency and power circuits. Additionally, the FET can provide isolation between the Gate and Source terminals, which is useful in applications where multiple FETs are used close together.

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