Allicdata Part #: | IPS60R460CEAKMA1-ND |
Manufacturer Part#: |
IPS60R460CEAKMA1 |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | CONSUMER |
More Detail: | |
DataSheet: | IPS60R460CEAKMA1 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.30201 |
Series: | * |
Part Status: | Active |
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The IPS60R460CEAKMA1 is a Field Effect Transistor (FET) that is specifically classified as a single n-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistors). This type of transistor is a particularly powerful type of transistor that performs various functions and is potentially beneficial for many industry applications. This article will discuss the various industry applications, as well as the general working principles of the IPS60R460CEAKMA1.
Industry applications for the IPS60R460CEAKMA1 can range from automotive to telecommunications and medical fields. This transistor has high power capabilities, low gate threshold voltage, low on-state resistance and low gate charge. In the automotive field, MOSFETs are commonly used for AC to DC power conversion, such as for the whole vehicle motor drive. Furthermore, those who work in the telecommunications industry may find them useful for high-efficiency switch-mode power supplies, distributed power systems and in ammeters. Lastly, in the medical field, they are often employed as switching drivers, boosting drivers and controllers.
The working principles of the IPS60R460CEAKMA1 involve the use of gate, source and drain control voltages. The source voltage is between 0 and 5V and is used to turn the gate voltage on and off. When the gate voltage is on, it allows current to flow between the source and drain terminals. The drain terminal has a higher source voltage, typically 12V or 14V, which applies an electric field to the gate terminal. This electric field is capable of controlling the conducting channels of the device by changing the widths of the channels and regulating the amount of current that can pass through the FET.
The IPS60R460CEAKMA1 is also capable of producing a wide variety of other effects, such as a high input impedance, fast switching speeds and low signal distortion. These features allow it to be used for a variety of applications, such as in switching power supplies, frequency converters, voltage boost circuits and in analog signal conditioning circuits.
In summary, it is clear to see why the IPS60R460CEAKMA1 is such a widely used single n-channel MOSFET. It has a wide range of industry applications, from automotive to medical and from telecommunications to signal conditioning. Additionally, its working principles involve the use of a gate, source and drain control voltages that allow for precise control of current flow. Overall, this makes the IPS60R460CEAKMA1 a powerful, reliable and versatile transistor.
The specific data is subject to PDF, and the above content is for reference
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