IPS65R400CEAKMA1

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The IPS65R400CEAKMA1 is a Power MOSFET device produced by Infineon Technologies, a provider of silicon-based semiconductor solutions for a range of applications. It is a single N-channel MOSFET device with a drain-to-source breakdown voltage of 400 volts. This device is ideal for applications such as switch-mode power supplies, motor control, lighting control, and any other application that requires a high voltage, high current switch. It is a PWM-Controllable N-Channel MOSFET with integrated protection features, protecting the circuitry from over-voltage, under-voltage, and over-temperature conditions.

The IPS65R400CEAKMA1 is a “logic level” MOSFET, meaning it has a low ‘threshold voltage’, or the voltage at which the device can be activated. This is important for applications where the voltage is otherwise too low to activate many standard MOSFETs. It has a very low on-resistance, meaning it can handle a very high current while consuming very little power. The device also has a fast switching time, meaning it can quickly turn on and off without losing its flow of current. It is able to handle up to 75A of peak current and can also dissipate up to 140W of power when fully activated.

The IPS65R400CEAKMA1 is constructed using advanced power MOSFET technology, meaning it has a very low number of parasitic elements, allowing it to have superior switching and on-state performance. It has integrated diode protection and has a reverse gate-to-source voltage capability of 40V. It is oxide-isolated, meaning it is able to operate in any environment without performance degradation due to environmental conditions.

The IPS65R400CEAKMA1 is a great choice for any application that requires a high voltage, high current switch. It provides superior switching and on-state performance, making it a reliable and long-lasting MOSFET device. Its low threshold voltage, fast switching time, and reverse gate-to-source voltage capability make it ideal for applications such as switch-mode power supplies and motor control. It is a reliable, long-lasting MOSFET device and is a great choice for any application that requires a high voltage, high current switch.

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