Allicdata Part #: | IPS60R800CEAKMA1-ND |
Manufacturer Part#: |
IPS60R800CEAKMA1 |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | CONSUMER |
More Detail: | |
DataSheet: | IPS60R800CEAKMA1 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.23370 |
Series: | * |
Part Status: | Active |
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The IPS60R800CEAKMA1 is a single high-voltage, N-channel, enhancement-mode power MOSFET. This MOSFET is designed for high-side switching applications, and features an avalanche-rated breakdown voltage of 800V and a current rating of 60A. For maximum energy efficiency, the MOSFET is utilizing a low on-resistance technology, which is achieved through the use of state-of-the-art vertical DMOS transistors.
This device is well-suited for a wide array of applications, ranging from high-voltage switching, DC/DC converters, LED lighting, general purpose motor control, and high-frequency lighting. It is also suitable for switching applications in power supplies, DC motors and linear systems.
The IPS60R800CEAKMA1 is designed to operate in an ambient temperature range of -55°C to +150°C and offers robust ESD protection of up to 8 kV human body model (HBM) and excellent thermal characteristics. The device also has a high-speed switching capability, with a maximum turn-on and turn-off time of 250 ns. It also features a variety of protection features, including a high avalanche energy level, a diode anti-parallel protection system and a transient suppression device.
The working principle behind the IPS60R800CEAKMA1 is quite simple and straightforward. When a positive voltage is applied to the gate, electrons in the channel region accelerate under the influence of the electric field, creating a channel current allowing electrons to flow between the source and drain. When the positive voltage is removed, the channel current is reversed and the electrons in the channel are again accelerated by the electric field, but in the opposite direction, preventing any current flow. This creates an efficient and highly-reliable switching device.
In summary, the IPS60R800CEAKMA1 is a powerful and highly-efficient single, N-channel MOSFET, which is specifically designed for high-side switching applications. It is characterized by a low on-resistance, a high avalanche energy level, robust ESD protection and excellent thermal characteristics. Its simple working principle enables it to function in a wide range of applications, including DC/DC converters, LED lighting, general purpose motor control and high-frequency lighting.
The specific data is subject to PDF, and the above content is for reference
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