Allicdata Part #: | IPS65R1K5CEAKMA1-ND |
Manufacturer Part#: |
IPS65R1K5CEAKMA1 |
Price: | $ 0.21 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V TO-251-3 |
More Detail: | N-Channel 650V 3.1A (Tc) 28W (Tc) Through Hole TO-... |
DataSheet: | IPS65R1K5CEAKMA1 Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.19081 |
Vgs(th) (Max) @ Id: | 3.5V @ 100µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | TO-251 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
Series: | CoolMOS™ CE |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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IPS65R1K5CEAKMA1 Application Field and Working Principle
IPS65R1K5CEAKMA1 is a member of a wide range of MOSFETs. It belongs to the Single family of FETs, MOSFETs, which are designed to provide high levels of performance and reliability. As a single, it offers a high level of on-state resistance and maximum temperature performance.
The MOSFET IPS65R1K5CEAKMA1 is a low voltage and low current MOSFET for power management applications. It is manufactured and packaged by Sanyo Semiconductor, using a proprietary process. The MOSFET is used in a variety of applications, from switching power supplies to battery chargers. It is also suitable for use in industry or automotive applications.
The IPS65R1K5CEAKMA1 MOSFET has a maximum junction temperature of 150°C, which ensures superior performance and reliability in high temperature environments. The pin arrangement allows compatibility with a wide range of PCB footprints, making it suitable for a range of applications.
The IPS65R1K5CEAKMA1 MOSFET works on the principle of Field Effect Transistor where two terminals are connected between the source and drain. The third terminal is the gate, which when activated electrically creates an inversion layer near the interface between the source and drain. This layer produces a high electric field and aids in controlling the flow of current across the channel.
The MOSFET also features an extrinsic gate capacitance, which is a parasitic capacitance that forms between the gate and other circuit elements. This capacitance improves the transient response of the MOSFET and helps reduce ringing on inductive loads. The gate capacitance is adjusted using on-chip trimming, allowing the user to tune the MOSFET’s performance to match the system’s requirements.
The IPS65R1K5CEAKMA1 MOSFET also has an extended temperature range, up to 150°C. This allows the device to operate in harsh environments, such as in liquid cooling systems. The device’s extended temperature range also helps to reduce failure rates and enhance reliability.
The IPS65R1K5CEAKMA1 holds several certifications that ensure it is suitable for a range of commercial, industrial and automotive applications. It is certified by Underwriters Laboratories (UL), the Canadian Standards Association (CSA) and the American Automobile Association (AAA), as well as multiple international standards.
The IPS65R1K5CEAKMA1 MOSFET is a reliable and cost-effective solution for a variety of power management applications. Its high reliability, extended temperature range, and compatibility with multiple standard footprints make it an ideal choice for a variety of applications, from consumer electronics to industrial automation.
The specific data is subject to PDF, and the above content is for reference
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