IPS60R400CEAKMA1

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IPS60R400CEAKMA1 Application Field and Working Principle

IPS60R400CEAKMA1 is an N-channel vertical double-diffused MOSFET (also known as VDMOS) specially designed for low voltage applications. It is a type of field effect transistor (FET) and is widely used in many different applications, such as motor control, microcontrollers, amplifiers and power management systems.

Part Overview

IPS60R400CEAKMA1 is a vertical double-diffused metal oxide semiconductor (VDMOS) type FET with an on-resistance of 4.0 ohms. It is housed in a 3.3V “T3” package, which measures 6mm x 6mm x 1.27mm. The device features low gate-drain capacitance and efficient switching characteristics. It is capable of handling up to 200V drain-to-source voltage and 3.2A drain current. The device also includes a built-in ESD protection circuit and a low thermal resistance.

Applications

IPS60R400CEAKMA1 is well suited for high speed switching applications and power management. It is also applicable in low voltage audio and video equipment, switch mode power supplies, and other low voltage applications. Its low gate-drain capacitance makes it suitable for use in high frequency switching applications. Additionally, the device is suitable for use in UPS systems and electronic lighting solutions such as LED lighting.

Working Principle

IPS60R400CEAKMA1 operates on the principle of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Its construction consists of two regions, a source and a drain, separated by a semiconductor channel. The source is connected to a negative voltage, while the drain is connected to a positive voltage. The gate is insulated from the channel and is connected to a voltage control signal, which can be either positive or negative. By changing the voltage on the gate, the channel resistance between the source and drain changes, allowing current to pass or not pass. This allows for efficient switching without the need for an external transistor.

In addition, the device also includes an included ESD protection circuit which helps to keep the device safe from electrostatic discharge. Furthermore, the device has a low thermal resistance which minimizes heat dissipation, enabling it to be used in applications that require higher power densities.

Conclusion

The IPS60R400CEAKMA1 is an N-channel vertical double-diffused MOSFET, specifically designed for low voltage applications. Its low gate-drain capacitance, efficient switching characteristics, and ESD protection circuit makes it suitable for high speed switching applications. Furthermore, its low thermal resistance makes it suitable for use in applications that require high power densities. This makes the IPS60R400CEAKMA1 an excellent choice for a wide range of applications.

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